W. Wierzchowski, K. Wieteska, A. Turos, W. Graeff, R. Groetzschel
{"title":"X-ray studies of Al/sub x/Ga/sub 1-x/As implanted with 1.5 MeV Se ions","authors":"W. Wierzchowski, K. Wieteska, A. Turos, W. Graeff, R. Groetzschel","doi":"10.1109/SIM.1998.785104","DOIUrl":null,"url":null,"abstract":"Al/sub x/Ga/sub 1-x/As epitaxial layers with x=0.45 and low dislocation density, implanted with 1.5 MeV Se/sup +/ ions to doses of 6/spl times/10/sup 13/-1/spl times/10/sup 15/ ions/cm/sup 2/ were studied with X-ray diffraction methods using conventional and synchrotron X-ray sources. The implantation caused considerable increase of lattice parameter reaching the maximum at the dose of 2/spl times/10/sup 14/ ions/cm/sup 2/. It was also found that the implantation produced a relatively thick layer with almost constant lattice parameter. The applied doses did not produce lattice amorphization at room temperature.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1998.785104","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Al/sub x/Ga/sub 1-x/As epitaxial layers with x=0.45 and low dislocation density, implanted with 1.5 MeV Se/sup +/ ions to doses of 6/spl times/10/sup 13/-1/spl times/10/sup 15/ ions/cm/sup 2/ were studied with X-ray diffraction methods using conventional and synchrotron X-ray sources. The implantation caused considerable increase of lattice parameter reaching the maximum at the dose of 2/spl times/10/sup 14/ ions/cm/sup 2/. It was also found that the implantation produced a relatively thick layer with almost constant lattice parameter. The applied doses did not produce lattice amorphization at room temperature.