光照射对GaAlAs红色LED表面氧化的影响

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785110

T. Shimozaki, T. Okino, M. Yamane

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引用次数: 0

摘要

通过在GaAlAs器件的颗粒上照射红光、绿光和红外线LED，研究了在GaAlAs器件表面由于光照射而形成的光吸收层。俄歇电子能谱深度剖面和电子探针显微分析表明，光照射在n位表面形成了光吸收层。光催化反应可能在该层的形成中起着非常重要的作用。

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Oxidation of GaAlAs red LED surface due to light irradiation

Formation of a light absorptive layer on the surface of a GaAlAs LED due to light irradiation has been studied by irradiating red, green light and infrared ray LEDs on a pellet of a GaAlAs device. The Auger electron spectroscopy depth profiles and electron probe micro analysis have revealed that the light absorptive layer is formed on the n-site surface by the light irradiation. Photocatalysis reactions may play a very important role in the formation of the layer.

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来源期刊

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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