C. Wetzel, T. Takeuchi, S. Nitta, S. Yamaguchi, H. Amano, I. Akasaki
{"title":"GaInN/GaN异质结构和量子阱的光学特性","authors":"C. Wetzel, T. Takeuchi, S. Nitta, S. Yamaguchi, H. Amano, I. Akasaki","doi":"10.1109/SIM.1998.785115","DOIUrl":null,"url":null,"abstract":"Photoreflection and photoluminescence spectroscopies have been used to identify details of the electronic bandstructure in GaInN/GaN strained heterostructures and multiple quantum well structures. Franz-Keldysh oscillations in the ternary layers are identified in both systems revealing large piezoelectric fields of 240 kV/cm (x=0.079, thin film) and 0.65 MV/cm (x=0.187). From spatially resolved luminescence a very narrow distribution /spl Delta/E=28 meV of the bandgap energy is derived (x=0.187). From the variation of the field with strain a piezoelectric coefficient dP/sub z//d/spl epsiv//sub zz/=0.3 C/m/sup 2/ is obtained corresponding to e/sub 14/=0.1 C/m/sup 2/ and an equilibrium polarization of GaN of P/sub eq/=43 mCm/sup 2/ is extrapolated in qualitative agreement with recent calculations.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optical properties of GaInN/GaN heterostructures and quantum wells\",\"authors\":\"C. Wetzel, T. Takeuchi, S. Nitta, S. Yamaguchi, H. Amano, I. Akasaki\",\"doi\":\"10.1109/SIM.1998.785115\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Photoreflection and photoluminescence spectroscopies have been used to identify details of the electronic bandstructure in GaInN/GaN strained heterostructures and multiple quantum well structures. Franz-Keldysh oscillations in the ternary layers are identified in both systems revealing large piezoelectric fields of 240 kV/cm (x=0.079, thin film) and 0.65 MV/cm (x=0.187). From spatially resolved luminescence a very narrow distribution /spl Delta/E=28 meV of the bandgap energy is derived (x=0.187). From the variation of the field with strain a piezoelectric coefficient dP/sub z//d/spl epsiv//sub zz/=0.3 C/m/sup 2/ is obtained corresponding to e/sub 14/=0.1 C/m/sup 2/ and an equilibrium polarization of GaN of P/sub eq/=43 mCm/sup 2/ is extrapolated in qualitative agreement with recent calculations.\",\"PeriodicalId\":253421,\"journal\":{\"name\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1998.785115\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1998.785115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optical properties of GaInN/GaN heterostructures and quantum wells
Photoreflection and photoluminescence spectroscopies have been used to identify details of the electronic bandstructure in GaInN/GaN strained heterostructures and multiple quantum well structures. Franz-Keldysh oscillations in the ternary layers are identified in both systems revealing large piezoelectric fields of 240 kV/cm (x=0.079, thin film) and 0.65 MV/cm (x=0.187). From spatially resolved luminescence a very narrow distribution /spl Delta/E=28 meV of the bandgap energy is derived (x=0.187). From the variation of the field with strain a piezoelectric coefficient dP/sub z//d/spl epsiv//sub zz/=0.3 C/m/sup 2/ is obtained corresponding to e/sub 14/=0.1 C/m/sup 2/ and an equilibrium polarization of GaN of P/sub eq/=43 mCm/sup 2/ is extrapolated in qualitative agreement with recent calculations.