GaInN/GaN异质结构和量子阱的光学特性

C. Wetzel, T. Takeuchi, S. Nitta, S. Yamaguchi, H. Amano, I. Akasaki
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引用次数: 0

摘要

光反射和光致发光光谱已被用于识别GaInN/GaN应变异质结构和多量子阱结构中的电子带结构的细节。在这两种体系中,三元层中的Franz-Keldysh振荡都被识别出来,显示出240 kV/cm (x=0.079,薄膜)和0.65 MV/cm (x=0.187)的大压电场。从空间分辨发光得到带隙能量非常窄的分布/spl Delta/E=28 meV (x=0.187)。根据场随应变的变化,得到了e/sub 14/=0.1 C/m/sup /对应的压电系数dP/sub z//d/spl epsiv//sub zz/=0.3 C/m/sup 2/,并推导出了P/sub eq/=43 mCm/sup 2/的GaN平衡极化,与最近的计算结果定性一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optical properties of GaInN/GaN heterostructures and quantum wells
Photoreflection and photoluminescence spectroscopies have been used to identify details of the electronic bandstructure in GaInN/GaN strained heterostructures and multiple quantum well structures. Franz-Keldysh oscillations in the ternary layers are identified in both systems revealing large piezoelectric fields of 240 kV/cm (x=0.079, thin film) and 0.65 MV/cm (x=0.187). From spatially resolved luminescence a very narrow distribution /spl Delta/E=28 meV of the bandgap energy is derived (x=0.187). From the variation of the field with strain a piezoelectric coefficient dP/sub z//d/spl epsiv//sub zz/=0.3 C/m/sup 2/ is obtained corresponding to e/sub 14/=0.1 C/m/sup 2/ and an equilibrium polarization of GaN of P/sub eq/=43 mCm/sup 2/ is extrapolated in qualitative agreement with recent calculations.
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