GaN/AlaN/InGaN led和ld的降解机制

D. Barton, M. Osiński
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引用次数: 9

摘要

我们对日亚蓝led的器件寿命和主要退化机制的研究可以追溯到1994年春天。在对高电流电脉冲下的快速失效进行初步研究后,确定金属迁移是导致退化的原因,我们将一些日亚NLPB-500 led进行了一系列寿命测试。第一次测试在正常工作条件下(20 mA, 23/spl℃)运行了1000小时。由于没有观察到明显的退化,使用相同的设备进行了第二次23/spl度/C测试,但电流范围在20到70 mA之间。在随后的测试中,使用与第二次测试相同的电流,每隔500小时将温度升高10/spl°C,直至最终温度达到95/spl°C。这项工作提出了一种热降解机制,在高温环境下主导降解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Degradation mechanisms in GaN/AlaN/InGaN LEDs and LDs
Our studies of device lifetime and the main degradation mechanisms in Nichia blue LEDs date back to spring 1994. Following the initial studies of rapid failures under high current electrical pulses, where metal migration was identified as the cause of degradation, we have placed a number of Nichia NLPB-500 LEDs on a series of life tests. The first test ran for 1000 hours under normal operating conditions (20 mA at 23/spl deg/C). As no noticeable degradation was observed, a second 23/spl deg/C test was performed with the same devices but with a range of currents between 20 and 70 mA. For subsequent tests, the temperature was increased by 10/spl deg/C in 500 h intervals up to a final temperature of 95/spl deg/C using the same currents applied in the second test. This work presents a thermal degradation mechanism that dominates degradation at high ambient temperatures.
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