分析了半绝缘砷化镓作为弛豫半导体的电学特性

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785078

B. Jones, J. Santana, M. McPherson

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引用次数: 2

摘要

从半绝缘(SI)砷化镓二极管的实验表明，结果可以用弛豫半导体理论进行分析。这在P-SI-N或肖特基- si -欧姆二极管中最为明显，当产生-重组(g-r)中心与深能级的比值增加时，辐照后的一致性得到改善。

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The electrical properties of semi-insulating GaAs analysed as a relaxation semiconductor

From experiments on semi-insulating (SI) GaAs diodes it is shown that the results can be analysed using relaxation semiconductor theory. This is most apparent for P-SI-N or Schottky-SI-Ohmic diodes and the agreement improves after irradiation when the ratio of generation-recombination (g-r) centres to deep levels increases.

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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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