发布求助
文献互助 智能选刊 最新文献

Microwave and Millimeter-Wave Monolithic Circuits最新文献

筛选
英文 中文
A High Speed GaAs Monolithic Transimpedance Amplifier 高速砷化镓单片跨阻放大器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114476
I. Bahl, E. Griffin, W. Powell, C. Ring
{"title":"A High Speed GaAs Monolithic Transimpedance Amplifier","authors":"I. Bahl, E. Griffin, W. Powell, C. Ring","doi":"10.1109/MCS.1986.1114476","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114476","url":null,"abstract":"This paper describes the design method and test results for a novel transimpedance amplifier suitable for very high speed optical communications systems The amplifier chip is developed for four different bit rates: 188, 565, 1130, and 1500 Mb/s with optical sensitivities -38.5, -33, -30, dBm, respectively. The amplifier provides 2 V peak to peak output and 30 dB dynamic range.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"25 13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125746117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Optical Technology for Microwave Applications 微波应用光学技术
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114475
H. Yen
{"title":"Optical Technology for Microwave Applications","authors":"H. Yen","doi":"10.1109/MCS.1986.1114475","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114475","url":null,"abstract":"Phased array radar, communication, telemetry, and electronic warfare systems frequently require the transmission and processing of gigahertz bandwidth signals. In airborne and space applications, where low weight and immunity from electromagnetic interference are desirable, low loss optical fibers with band-width distance products as great as 100 GHz · km are an ideal vehicle for the transmission of these broadband microwave signals.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122691724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
A 2 to 8 GHz Leveling Loop Using a GaAs MMIC Active Splitter and Attenuator 使用GaAs MMIC有源分配器和衰减器的2至8ghz调平环路
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114483
G. Barta, K. Jones, G. C. Herrick, E. Strid
{"title":"A 2 to 8 GHz Leveling Loop Using a GaAs MMIC Active Splitter and Attenuator","authors":"G. Barta, K. Jones, G. C. Herrick, E. Strid","doi":"10.1109/MCS.1986.1114483","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114483","url":null,"abstract":"A wide-band monolithic GaAs bridged-T variable attenuator has been used with a monolithic GaAs active power splitter to form a compact, 2 to 8 GHz leveling loop for RF sources having a minimum 12dB leveling range with buffered output. The attenuator internally optimizes input and output return loss over a 1 to 10 GHz bandwidth by the use of an on-chip GaAs op-amp. The active power splitter provides unity gain to each port over a 1 to 10 GHz bandwidth by the use of distributed amplification. The entire 4.5 cm by 42 cm subsystem was realized with surface mount packages on RT-Duroid®®.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"71 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132025065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
High Volume, Low Cost, MMIC Receiver Front End 高容量，低成本，MMIC接收器前端
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114479
A. Podell, W.W. Nelson
{"title":"High Volume, Low Cost, MMIC Receiver Front End","authors":"A. Podell, W.W. Nelson","doi":"10.1109/MCS.1986.1114479","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114479","url":null,"abstract":"Producing inexpensive MMIC receiver front ends in large quantities has focused attention on details of MMIC design and fabrication that are different from laboratory, or small volume production. This paper discusses design and testing tradeoffs and the performance of the resulting packaged MMIC.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131223974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Monolithic Optoelectronic Receiver for Gbit Operation 用于Gbit操作的单片光电接收机
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114491
S. Ray, M. Walton
{"title":"Monolithic Optoelectronic Receiver for Gbit Operation","authors":"S. Ray, M. Walton","doi":"10.1109/MCS.1986.1114491","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114491","url":null,"abstract":"A monolithic optoelectronic receiver chip was designed and fabricated for operation at 1.0 Gbit/sec data transmission rate. The major components of the receiver chip are a fast photodiode, a preamplifier, and a 1:4 demultiplexer circuit fabricated on semi-insulating GaAs substrate. Optical/electrical functionality has been demonstrated at wafer level.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121468193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
30 GHz Monolithic Balanced Mixers Using an Ion-Implanted FET-Compatible 3-Inch GaAs Wafer Process Technology 采用离子注入fet兼容3英寸砷化镓晶圆工艺技术的30 GHz单片平衡混频器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114477
P. Bauhahn, A. Contolatis, V. Sokolov, C. Chao
{"title":"30 GHz Monolithic Balanced Mixers Using an Ion-Implanted FET-Compatible 3-Inch GaAs Wafer Process Technology","authors":"P. Bauhahn, A. Contolatis, V. Sokolov, C. Chao","doi":"10.1109/MCS.1986.1114477","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114477","url":null,"abstract":"An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated, tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122402829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Low Noise Microwave HIFET Using MOCVD 采用MOCVD的低噪声微波效应场效应
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114487
H. Takakuwa, K. Tanaka, K. Togashi, H. Ohke, M. Kanazawa, Y. Kato
{"title":"Low Noise Microwave HIFET Using MOCVD","authors":"H. Takakuwa, K. Tanaka, K. Togashi, H. Ohke, M. Kanazawa, Y. Kato","doi":"10.1109/MCS.1986.1114487","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114487","url":null,"abstract":"Low noise HIFET (Hetero Interface Field Effect Transistor, also known asTEGFET or HEMT) AIGaAs/GaAs heterostructure devices have been developed using Metal Organic Chemical Vapor Deposition (MOCVD). The HIFET's with 0.5-micron long and 200-micron wide gates have shown a minimum noise figure of 0.87 dB with an associated gain of 12.5 dB at 12 GHz at room temperature. A substantial improvement in noise figure was obtained at lower temperatures (-l0°C), especially when compared to GaAs MESFET devices.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"2 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124913554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Planar MMIC Hybrid Circuit and Frequency Converter 平面MMIC混合电路及变频器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114488
T. Hirota, H. Ogawa, Y. Tarusawa, K. Owada
{"title":"Planar MMIC Hybrid Circuit and Frequency Converter","authors":"T. Hirota, H. Ogawa, Y. Tarusawa, K. Owada","doi":"10.1109/MCS.1986.1114488","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114488","url":null,"abstract":"A \"planar\" circuit configuration for MMIC (Monolithic Microwave Integrated Circuit) has been proposed. It uses coplanar waveguides and slotlines on the upper side of the substrate. Novel hybrid circuits have been fabricated. It has also been shown that small sized, balanced FET circuits can be achieved.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133922046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
30 GHz Multi-Bit Monolithic Phase Shifters 30ghz多比特单片移相器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1985-06-01 DOI: 10.1109/MCS.1985.1113627
P. Bauhahn, C. Butter, V. Sokolov, A. Contolatis
{"title":"30 GHz Multi-Bit Monolithic Phase Shifters","authors":"P. Bauhahn, C. Butter, V. Sokolov, A. Contolatis","doi":"10.1109/MCS.1985.1113627","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113627","url":null,"abstract":"The design and performance of GaAs monolithic 3-bit and 4/5 bit switched line phase shifters for Ka-band operation are discussed. Both conventional recessed and self-aligned gate (SAG) switching FET designs are presented. The insertionloss was as low as 2dB per bit for the recessed gate and 2.9 dB per bit with the SAG gate devices for the particular doping levels used.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115511140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A 2-W Ku-Band Monolithic GaAs FET Amplifier 一种2w ku波段单片GaAs场效应晶体管放大器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1985-06-01 DOI: 10.1109/MCS.1985.1113631
H. Macksey, H. Tserng, H. Shih
{"title":"A 2-W Ku-Band Monolithic GaAs FET Amplifier","authors":"H. Macksey, H. Tserng, H. Shih","doi":"10.1109/MCS.1985.1113631","DOIUrl":"https://doi.org/10.1109/MCS.1985.1113631","url":null,"abstract":"A monolithic three-stage Ku-band GaAs FET power amplifier has been designed, fabricated. Epitaxial layers are grown by molecular beam epitaxy FETs have a source overlay geometry with the n+ ledge channel structure. The amplifiers have up to 2 W output power at 16.5 GHz with 12 dB gain, 20% efficiency.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115038221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信