{"title":"采用离子注入fet兼容3英寸砷化镓晶圆工艺技术的30 GHz单片平衡混频器","authors":"P. Bauhahn, A. Contolatis, V. Sokolov, C. Chao","doi":"10.1109/MCS.1986.1114477","DOIUrl":null,"url":null,"abstract":"An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated, tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"30 GHz Monolithic Balanced Mixers Using an Ion-Implanted FET-Compatible 3-Inch GaAs Wafer Process Technology\",\"authors\":\"P. Bauhahn, A. Contolatis, V. Sokolov, C. Chao\",\"doi\":\"10.1109/MCS.1986.1114477\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated, tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1986.1114477\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1986.1114477","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
30 GHz Monolithic Balanced Mixers Using an Ion-Implanted FET-Compatible 3-Inch GaAs Wafer Process Technology
An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated, tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.
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