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A Monolithic GaAs 3-Bit Phase Quantization Sampler 单片砷化镓3位相位量化采样器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI: 10.1109/MCS.1987.1114513
T. Vu, J. Hattis
{"title":"A Monolithic GaAs 3-Bit Phase Quantization Sampler","authors":"T. Vu, J. Hattis","doi":"10.1109/MCS.1987.1114513","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114513","url":null,"abstract":"This paper describes the analysis, design, and development of a high-speed A/D and D/A converter using phase-quantization sampling. A monolithic GaAs A/D and D/A converter has been demonstrated within a RF signal acquisition system. Performance data on the monolithic IC reveals that the 3-bit quantization system exhibits signal reconstruction with harmonic suppression exceeding -25 dB across an IF bandwidth of greater than 900 MHz.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131419977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Three-Bit Monolithic Phase Shifter at V-Band v波段三比特单片移相器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI: 10.1109/MCS.1987.1114520
A. Jacomb-Hood, D. Seielstad, J. D. Merrill
{"title":"A Three-Bit Monolithic Phase Shifter at V-Band","authors":"A. Jacomb-Hood, D. Seielstad, J. D. Merrill","doi":"10.1109/MCS.1987.1114520","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114520","url":null,"abstract":"This paper describes the design and performance of a three-bit monolithic phase shifter at V-band. The selected circuit approach was a reflection phase shifter with switched delay lines. Schottky diodes were used as the switching elements. Tested at 62.5 GHz, the RMS phase error was 2.7°, the insertion loss 10.8 +- 1.8 dB (including fixture loss), and the VSWR was better than 2.1:1. The maximum DC power requirement was 40 mW.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127070143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
W-band GaAs MESFET Frequency Doubler w波段GaAs MESFET倍频器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI: 10.1109/MCS.1987.1114504
J. Geddes, V. Sokolov, A. Contolatis
{"title":"W-band GaAs MESFET Frequency Doubler","authors":"J. Geddes, V. Sokolov, A. Contolatis","doi":"10.1109/MCS.1987.1114504","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114504","url":null,"abstract":"A monolithic W-band frequency doubler has been developed using submicron gate length GaAs MESFETs fabricated on ion implanted material. The frequency doubler provides a power output of over 4.0 mW at 94 GHz with an input drive of 70 mW at 47 GHz. To of a MESFET our knowledge this is the first report frequency doubler operating at W-band.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128695431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Stability and Reliability Investigation on Fully ECL Compatible High Speed- Logic ICs. 全ECL兼容高速逻辑集成电路的稳定性和可靠性研究。
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI: 10.1109/MCS.1987.1114514
Y. Hosono, H. Sato, Y. Mira, S. Ichikawa, H. Hirayama, K. Katsukawa, K. Ueda, K. Uetake, T. Noguchi, H. Kohzu
{"title":"Stability and Reliability Investigation on Fully ECL Compatible High Speed- Logic ICs.","authors":"Y. Hosono, H. Sato, Y. Mira, S. Ichikawa, H. Hirayama, K. Katsukawa, K. Ueda, K. Uetake, T. Noguchi, H. Kohzu","doi":"10.1109/MCS.1987.1114514","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114514","url":null,"abstract":"The electrical characteristics stability and reliability were investigated on newly developed high speed GaAs logic ICS. A resistor-loaded source-coupled FET logic (SCFL) was employed as a basic circuit architecture. The selectively epitaxial grown n/sup +/ - GaAs layers were aclopted for the contact regions of the WSi self-aligned gate FET. Maximum operating data rate of more than 2.6 Gb/s was achieved in these devices, guaranteeing sufficient supply voltage and phase margin. No failure has been observed in DC bias test for 3,000 hours and in RF operational test at 2 Gb/s for 7,000 hours.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134026707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
K/sub a/-band Monolithic GaAs Power FET Amplifiers K/sub /波段单片GaAs功率场效应管放大器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI: 10.1109/MCS.1987.1114524
H.-L.A. Hung, A. Ezzeddine, L. Holdeman, F. Phelleps, J. F. Allison, A. Cornfeld, T. Smith, H. Huang
{"title":"K/sub a/-band Monolithic GaAs Power FET Amplifiers","authors":"H.-L.A. Hung, A. Ezzeddine, L. Holdeman, F. Phelleps, J. F. Allison, A. Cornfeld, T. Smith, H. Huang","doi":"10.1109/MCS.1987.1114524","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114524","url":null,"abstract":"GaAs power MMIC amplifiers with an optimized FET structure operating at K/sub a/-band have achieved a small-signal gain of 4.3 dB and an output power of 481 mw. These 1.7 x 0.9-mm MMICs include DC-blocking capacitors and bias networks. A cascaded four-stage amplifier has achieved a power gain of 18.9 dB and output power of 437 mw at 28 GHz. These results may represent the highest power/gain yet demonstrated from cascaded stages of MMICs with on-chip bias and DC blocking at K/sub a/-band.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133226280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of Key Monolithic Circuits to Ka-Band Full MMIC Receivers ka波段全MMIC接收机关键单片电路的研制
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI: 10.1109/MCS.1987.1114518
T. Ohira, T. Tokumitsu, T. Hiraoka, Yuichi Kihata, K. Araki, H. Kato
{"title":"Development of Key Monolithic Circuits to Ka-Band Full MMIC Receivers","authors":"T. Ohira, T. Tokumitsu, T. Hiraoka, Yuichi Kihata, K. Araki, H. Kato","doi":"10.1109/MCS.1987.1114518","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114518","url":null,"abstract":"Key monolithic circuits to Ka-band full MMIC receivers have been designed and fabricated. Conventional hybrid-oriented elements such as RF image-rejection filters, LO dielectric resonators and IF hybrid couplers have been eliminated for the full MMIC configuration. Prospects have been obtained for realization of very-small-size microwave communication receivers.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115861407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
A New Method of Analyzing and Modeling Integrated Optoelectronic Components 集成光电元件分析与建模新方法
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI: 10.1109/MCS.1987.1114512
N. Dagli, C. Fonstad
{"title":"A New Method of Analyzing and Modeling Integrated Optoelectronic Components","authors":"N. Dagli, C. Fonstad","doi":"10.1109/MCS.1987.1114512","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114512","url":null,"abstract":"Using a mode matching technique, a modular microwave equivalent circuit incorporating both guided and continuum spectra has been developed to model integrated optoelectronic components accurately with limited computational effort. The analysis is verified with experiments on GaAs rib waveguides and directional and three guide couplers.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127256984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Monolithic MBE GaAs Pin Diode Limiter 单片MBE GaAs引脚二极管限幅器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI: 10.1109/MCS.1987.1114511
D. Seymour, D. Heston, R. Lehmann
{"title":"Monolithic MBE GaAs Pin Diode Limiter","authors":"D. Seymour, D. Heston, R. Lehmann","doi":"10.1109/MCS.1987.1114511","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114511","url":null,"abstract":"A broadband MBE GaAs PIN/NIP diode limiter has demonstrated 15 dB of isolation with a +32.5 dBm input signal while maintaining less than 0.25 dB of small-signal insertion loss from 0.05 GHz to 14 GHz. These results were obtained by incorporating vertical GaAs PIN/NIP diodes in a shunt-loaded microstrip configuration.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131562543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
A Distributed Monolithic 2-18 GHz Dual-gate FET Mixer 一种分布式单片2- 18ghz双栅极场效应晶体管混频器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI: 10.1109/MCS.1987.1114509
T. S. Howard, A. Pavio
{"title":"A Distributed Monolithic 2-18 GHz Dual-gate FET Mixer","authors":"T. S. Howard, A. Pavio","doi":"10.1109/MCS.1987.1114509","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114509","url":null,"abstract":"A novel broadband mixer topology, which can be implemented using either monolithic or discrete integrated circuit methods, has been developed using distributed design techniques. The MMIC mixer exhibits excellent 2-18 GHz conversion gain performance with signal handling capabilities and LO drive requirements similar to conventional diode double-balanced circuits.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115260380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A Low Current, High Gain Monolithic Amplifier Covering 5-20 GHz Bandwidth 一种覆盖5- 20ghz带宽的低电流、高增益单片放大器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI: 10.1109/MCS.1987.1114508
P. Terzian
{"title":"A Low Current, High Gain Monolithic Amplifier Covering 5-20 GHz Bandwidth","authors":"P. Terzian","doi":"10.1109/MCS.1987.1114508","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114508","url":null,"abstract":"A monolithic amplifier has been developed using a three-stage structure with feedback input/output stages and a reactively matched middle stage. The amplifier has exhibited greater than 12dB gain across 5-20 GHz bandwidth at a bias current of 40mA. The current to gain efficiency of 3.3mA/dB is the highest ever reported for a monolithic amplifier covering this bandwidth. The VSWR is less than 2.0:1 at input and less than 2.5:1 at output. The middle stage also provides a separate gain control with greater than 10dB dynamic range.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115618893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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