K/sub /波段单片GaAs功率场效应管放大器

Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI:10.1109/MCS.1987.1114524

H.-L.A. Hung, A. Ezzeddine, L. Holdeman, F. Phelleps, J. F. Allison, A. Cornfeld, T. Smith, H. Huang

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引用次数: 0

摘要

采用优化的K/sub /波段FET结构的GaAs功率MMIC放大器实现了4.3 dB的小信号增益和481 mw的输出功率。这些1.7 x 0.9 mm mmic包括直流阻塞电容器和偏置网络。级联四级放大器在28 GHz时的功率增益为18.9 dB，输出功率为437 mw。这些结果可能代表了具有片上偏置和K/sub / a/波段直流阻塞的mmic级联级所证明的最高功率/增益。

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K/sub a/-band Monolithic GaAs Power FET Amplifiers

GaAs power MMIC amplifiers with an optimized FET structure operating at K/sub a/-band have achieved a small-signal gain of 4.3 dB and an output power of 481 mw. These 1.7 x 0.9-mm MMICs include DC-blocking capacitors and bias networks. A cascaded four-stage amplifier has achieved a power gain of 18.9 dB and output power of 437 mw at 28 GHz. These results may represent the highest power/gain yet demonstrated from cascaded stages of MMICs with on-chip bias and DC blocking at K/sub a/-band.

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Microwave and Millimeter-Wave Monolithic Circuits

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