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Ion Implanted W-Band Monolithic Balanced Mixers for Broadband Applications 宽带应用的离子注入w波段单片平衡混频器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI: 10.1109/MCS.1987.1114522
T. Trinh, W. Wong, D. Li, J. Kessler
{"title":"Ion Implanted W-Band Monolithic Balanced Mixers for Broadband Applications","authors":"T. Trinh, W. Wong, D. Li, J. Kessler","doi":"10.1109/MCS.1987.1114522","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114522","url":null,"abstract":"An all ion-implanted monolithic broadband balanced mixer fabricated on a GaAs substrate for operation at W-band frequencies is described. A deep implanted buried n+ layer was used to minimize the diode series resistance. Ohmic contacts were formed by standard alloying of planar eutectic AuGe metallization into the n+ layer. The mixer diode structure is completely compatible with GaAs MESFET-based monolithic integrated circuit processing techniques. A conversion loss from 6.8 to 10 dB has been measured over an RF range of 75 to 88 GHz, with a LO drive of 10 dBm at 92 GHz.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122277188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Reliability Investigation on S- Band GaAs MMIC S波段GaAs MMIC的可靠性研究
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI: 10.1109/MCS.1987.1114516
K. Katsukawa, T. Kimura, K. Ueda, T. Najuchi
{"title":"Reliability Investigation on S- Band GaAs MMIC","authors":"K. Katsukawa, T. Kimura, K. Ueda, T. Najuchi","doi":"10.1109/MCS.1987.1114516","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114516","url":null,"abstract":"Accelerated life tests and radiation hardness tests have been conducted on GaAs MMICs and tie constituent elements. 0.35 to 1.3 x 10/sup 8/ hours MTF (Median Time to Failure) at 130°C Tch were estimated for a wide band amplifier up to S-band . No failure has been observed on RF operation tests for 3000 hours at Tch of 180°C and 205°C values for 12 samples, respectively. No degradation in the electrical performance was observed up to 1 x 10/sup 7/ rad gamma-ray irradiation with 5% criteria for the the S-band two-stage amplifiers, two-modulus prescalers and their FETs . It has been confirmed that the MMICs prcduced, using NEC's 0.8 µm long T-shaped WSi gate FET manufacturing process, are sufficiently reliable for practical applications.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128247528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Nonlinear Modeling for MMIC's MMIC的非线性建模
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI: 10.1109/MCS.1987.1114523
D. Estreich
{"title":"Nonlinear Modeling for MMIC's","authors":"D. Estreich","doi":"10.1109/MCS.1987.1114523","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114523","url":null,"abstract":"Nonlinear microwave CAD as applied to GaAs MMIC's is still in its infancy. A brief review is given of some of the work on modeling the nonlinear or \"large-signal\" behavior of the GaAs FET and nonlinear microwave circuit simulation. This is an important topic to the future success of GaAs MMIC's. Several important issues are raised with respect to nonlinear CAD for GaAs MMIC's.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127653181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low Cost MillImeter Wave Monolithic Receivers 低成本毫米波单片接收机
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI: 10.1109/MCS.1987.1114517
A. Chu, L. Chu, D. Sloat, M. Theobald, J. Teunas, T. Litchfield, W. Moroney
{"title":"Low Cost MillImeter Wave Monolithic Receivers","authors":"A. Chu, L. Chu, D. Sloat, M. Theobald, J. Teunas, T. Litchfield, W. Moroney","doi":"10.1109/MCS.1987.1114517","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114517","url":null,"abstract":"A 35 GHz receiver using GaAs monolithic and hybrid circuits has been developed for low cost manufacture. The receiver is comprised of a downconverter, an If amplifier and voltage regulators. This paper will report on the design, fabrication, integration, packaging and testing of a monolithic mixer, a monolithic Gunn Diode Oscillator and a GaAs Downconverter circuit which has exhibited a SSB receiver noise figure of 9.5dB.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117239507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Millimeter-Wave Monolithic Gunn Oscillators 毫米波单片甘振荡器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI: 10.1109/MCS.1987.1114505
J. C. Chen, C. Pao, D. Wong
{"title":"Millimeter-Wave Monolithic Gunn Oscillators","authors":"J. C. Chen, C. Pao, D. Wong","doi":"10.1109/MCS.1987.1114505","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114505","url":null,"abstract":"A millimeter-wave monolithic GaAs Gunn oscillator has been designed, fabricated and tested. Epitaxial layers were grown by conventional vapor phase epitaxy on semi-insulating substrate. The matching circuit and bias circuitry were monolithically fabricated on the same chip as the active device. With no external tuning, the oscillator chip delivers 1 mW and 1.5 mW at 68.4 GHz and 44.9 GHz, respectively. The best performance was achieved at 41.6 GHz with 4 mW output power. This is the first fully monolithic Gunn oscillator ever reported at these frequencies.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122565206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A Producible 2 to 20 GHz Monolithic Power Amplifier 一个可生产的2至20 GHz单片功率放大器
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI: 10.1109/MCS.1987.1114507
Ralph, Hsrlladay, Marty, Jones, Steve Nelson
{"title":"A Producible 2 to 20 GHz Monolithic Power Amplifier","authors":"Ralph, Hsrlladay, Marty, Jones, Steve Nelson","doi":"10.1109/MCS.1987.1114507","DOIUrl":"https://doi.org/10.1109/MCS.1987.1114507","url":null,"abstract":"The design, fabrication, and performance of a 0.4-W, 2 to 20 GHz distributed amplifier are described in this paper. Small-signal gain is 5 dB and power-added efficiency is 15%. The amplifier is fabricated on ion-implanted GaAs, and achieves excellent performance through use of series gate capacitors and a tapered drain line. Circuit layout and optimization to obtain process insensitivity and first-pass design success are discussed. A comparison is made to a commercially available state-of-the-art 6 to 18 GHz amplifier designed using conventional (lossy-mismatch) topology. The distributed amplifier is shown to have much improved bandwidth, SWR, gain flatness, and insensitivity to process variations, while retaining similar output power and efficiency.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134085542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
A Closed-Form Expression for Representing the Distributed Nature of the Spiral Inductor 一种表示螺旋电感分布特性的封闭表达式
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114485
D. Krafcsik, D. Dawson
{"title":"A Closed-Form Expression for Representing the Distributed Nature of the Spiral Inductor","authors":"D. Krafcsik, D. Dawson","doi":"10.1109/MCS.1986.1114485","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114485","url":null,"abstract":"A closed form expression for the modeling of rectangular spiral inductors to twice the self-resonant frequency is derived and compared to experimental results. The mutual inductance effects of the ground plane, and phase shift effects are considered in this analysis.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115388033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 52
GaAs Phase-Coherent Microwave Multiple-Signal Generation Using All-Pass Networks
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114482
S. K. Altes, Tzu-Hung Chen, L. Ragonese
{"title":"GaAs Phase-Coherent Microwave Multiple-Signal Generation Using All-Pass Networks","authors":"S. K. Altes, Tzu-Hung Chen, L. Ragonese","doi":"10.1109/MCS.1986.1114482","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114482","url":null,"abstract":"All-pass network techniques have made it possible to realize very small monolithic lumped active phase shifters with decade bandwidth, high yield, and relative phase stability, even when the device parameters vary +-20%. We have successfully demonstrated fully monolithic first-order networks (at 250 MHz) and second-order networks (at 4 GHz).","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124282525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A W-Band Monolithic GaAs PIN Diode Switch 一种w波段单片砷化镓PIN二极管开关
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114478
G. M. Nesbit, D. Wong, D. Li, J. C. Chen
{"title":"A W-Band Monolithic GaAs PIN Diode Switch","authors":"G. M. Nesbit, D. Wong, D. Li, J. C. Chen","doi":"10.1109/MCS.1986.1114478","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114478","url":null,"abstract":"A state-of-the-art performance has been achieved for a W-band monolithic single-pole-single-throw PIN diode switch. An insertion loss of less than 0.5 dB with return loss greater than 15 dB (transmission mode) and an isolation greater than 11 dB (isolation mode) have been measured over a 6 GHz bandwidth (80 to 86 GHz).","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133574326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Fabrication of Low Power, High-Speed GaAs LSI On-Board Baseband Switching Matrix 低功耗、高速GaAs LSI板载基带开关矩阵的制备
Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1986-06-01 DOI: 10.1109/MCS.1986.1114481
R. Yamamoto, K. Ueda, H. Nagao, Tadashi Morimura, I. Eguchi, M. Kudoh, K. Kinuhata, P. Nuspl
{"title":"Fabrication of Low Power, High-Speed GaAs LSI On-Board Baseband Switching Matrix","authors":"R. Yamamoto, K. Ueda, H. Nagao, Tadashi Morimura, I. Eguchi, M. Kudoh, K. Kinuhata, P. Nuspl","doi":"10.1109/MCS.1986.1114481","DOIUrl":"https://doi.org/10.1109/MCS.1986.1114481","url":null,"abstract":"A GaAs LSI On-Board Baseband Switching Matrix (BSM) for use in satellite communications for time-division multiple access (TDMA) system, has been designed and fabricated by using low dissipated Buffered-FET-Logic(BFL) with one level- shifting diode with the FET threshold voltage of about -0.5 V. For a 120 Mbit/s rate traffic signal to be used for TDMA , complete connectivity was confirmed for any possible switching pattern with a fast rise/fall time of about 1 ns at a power dissipation of 160 mW. The switch size is 16x4, expandable up to 16x16 by interbonding.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124114650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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