{"title":"宽带应用的离子注入w波段单片平衡混频器","authors":"T. Trinh, W. Wong, D. Li, J. Kessler","doi":"10.1109/MCS.1987.1114522","DOIUrl":null,"url":null,"abstract":"An all ion-implanted monolithic broadband balanced mixer fabricated on a GaAs substrate for operation at W-band frequencies is described. A deep implanted buried n+ layer was used to minimize the diode series resistance. Ohmic contacts were formed by standard alloying of planar eutectic AuGe metallization into the n+ layer. The mixer diode structure is completely compatible with GaAs MESFET-based monolithic integrated circuit processing techniques. A conversion loss from 6.8 to 10 dB has been measured over an RF range of 75 to 88 GHz, with a LO drive of 10 dBm at 92 GHz.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Ion Implanted W-Band Monolithic Balanced Mixers for Broadband Applications\",\"authors\":\"T. Trinh, W. Wong, D. Li, J. Kessler\",\"doi\":\"10.1109/MCS.1987.1114522\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An all ion-implanted monolithic broadband balanced mixer fabricated on a GaAs substrate for operation at W-band frequencies is described. A deep implanted buried n+ layer was used to minimize the diode series resistance. Ohmic contacts were formed by standard alloying of planar eutectic AuGe metallization into the n+ layer. The mixer diode structure is completely compatible with GaAs MESFET-based monolithic integrated circuit processing techniques. A conversion loss from 6.8 to 10 dB has been measured over an RF range of 75 to 88 GHz, with a LO drive of 10 dBm at 92 GHz.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1987.1114522\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1987.1114522","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ion Implanted W-Band Monolithic Balanced Mixers for Broadband Applications
An all ion-implanted monolithic broadband balanced mixer fabricated on a GaAs substrate for operation at W-band frequencies is described. A deep implanted buried n+ layer was used to minimize the diode series resistance. Ohmic contacts were formed by standard alloying of planar eutectic AuGe metallization into the n+ layer. The mixer diode structure is completely compatible with GaAs MESFET-based monolithic integrated circuit processing techniques. A conversion loss from 6.8 to 10 dB has been measured over an RF range of 75 to 88 GHz, with a LO drive of 10 dBm at 92 GHz.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
