{"title":"一种w波段单片砷化镓PIN二极管开关","authors":"G. M. Nesbit, D. Wong, D. Li, J. C. Chen","doi":"10.1109/MCS.1986.1114478","DOIUrl":null,"url":null,"abstract":"A state-of-the-art performance has been achieved for a W-band monolithic single-pole-single-throw PIN diode switch. An insertion loss of less than 0.5 dB with return loss greater than 15 dB (transmission mode) and an isolation greater than 11 dB (isolation mode) have been measured over a 6 GHz bandwidth (80 to 86 GHz).","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A W-Band Monolithic GaAs PIN Diode Switch\",\"authors\":\"G. M. Nesbit, D. Wong, D. Li, J. C. Chen\",\"doi\":\"10.1109/MCS.1986.1114478\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A state-of-the-art performance has been achieved for a W-band monolithic single-pole-single-throw PIN diode switch. An insertion loss of less than 0.5 dB with return loss greater than 15 dB (transmission mode) and an isolation greater than 11 dB (isolation mode) have been measured over a 6 GHz bandwidth (80 to 86 GHz).\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1986.1114478\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1986.1114478","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A state-of-the-art performance has been achieved for a W-band monolithic single-pole-single-throw PIN diode switch. An insertion loss of less than 0.5 dB with return loss greater than 15 dB (transmission mode) and an isolation greater than 11 dB (isolation mode) have been measured over a 6 GHz bandwidth (80 to 86 GHz).
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