{"title":"S波段GaAs MMIC的可靠性研究","authors":"K. Katsukawa, T. Kimura, K. Ueda, T. Najuchi","doi":"10.1109/MCS.1987.1114516","DOIUrl":null,"url":null,"abstract":"Accelerated life tests and radiation hardness tests have been conducted on GaAs MMICs and tie constituent elements. 0.35 to 1.3 x 10/sup 8/ hours MTF (Median Time to Failure) at 130°C Tch were estimated for a wide band amplifier up to S-band . No failure has been observed on RF operation tests for 3000 hours at Tch of 180°C and 205°C values for 12 samples, respectively. No degradation in the electrical performance was observed up to 1 x 10/sup 7/ rad gamma-ray irradiation with 5% criteria for the the S-band two-stage amplifiers, two-modulus prescalers and their FETs . It has been confirmed that the MMICs prcduced, using NEC's 0.8 µm long T-shaped WSi gate FET manufacturing process, are sufficiently reliable for practical applications.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Reliability Investigation on S- Band GaAs MMIC\",\"authors\":\"K. Katsukawa, T. Kimura, K. Ueda, T. Najuchi\",\"doi\":\"10.1109/MCS.1987.1114516\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Accelerated life tests and radiation hardness tests have been conducted on GaAs MMICs and tie constituent elements. 0.35 to 1.3 x 10/sup 8/ hours MTF (Median Time to Failure) at 130°C Tch were estimated for a wide band amplifier up to S-band . No failure has been observed on RF operation tests for 3000 hours at Tch of 180°C and 205°C values for 12 samples, respectively. No degradation in the electrical performance was observed up to 1 x 10/sup 7/ rad gamma-ray irradiation with 5% criteria for the the S-band two-stage amplifiers, two-modulus prescalers and their FETs . It has been confirmed that the MMICs prcduced, using NEC's 0.8 µm long T-shaped WSi gate FET manufacturing process, are sufficiently reliable for practical applications.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1987.1114516\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1987.1114516","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
摘要
对砷化镓微晶合金及其组成元素进行了加速寿命试验和辐射硬度试验。在130°C Tch下，对于高达s波段的宽带放大器，估计为0.35至1.3 x 10/sup 8/小时MTF(中位故障时间)。在温度分别为180°C和205°C的条件下，对12个样品进行了3000小时的射频操作测试，未观察到故障。对于s波段两级放大器、双模数预扩器和它们的场效应管，在5%的标准下，高达1 x 10/sup 7/ rad的伽马射线照射下，电性能没有下降。经证实，采用NEC的0.8 μ m长t形WSi栅极FET制造工艺生产的mmic在实际应用中足够可靠。
Accelerated life tests and radiation hardness tests have been conducted on GaAs MMICs and tie constituent elements. 0.35 to 1.3 x 10/sup 8/ hours MTF (Median Time to Failure) at 130°C Tch were estimated for a wide band amplifier up to S-band . No failure has been observed on RF operation tests for 3000 hours at Tch of 180°C and 205°C values for 12 samples, respectively. No degradation in the electrical performance was observed up to 1 x 10/sup 7/ rad gamma-ray irradiation with 5% criteria for the the S-band two-stage amplifiers, two-modulus prescalers and their FETs . It has been confirmed that the MMICs prcduced, using NEC's 0.8 µm long T-shaped WSi gate FET manufacturing process, are sufficiently reliable for practical applications.
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