{"title":"一个可生产的2至20 GHz单片功率放大器","authors":"Ralph, Hsrlladay, Marty, Jones, Steve Nelson","doi":"10.1109/MCS.1987.1114507","DOIUrl":null,"url":null,"abstract":"The design, fabrication, and performance of a 0.4-W, 2 to 20 GHz distributed amplifier are described in this paper. Small-signal gain is 5 dB and power-added efficiency is 15%. The amplifier is fabricated on ion-implanted GaAs, and achieves excellent performance through use of series gate capacitors and a tapered drain line. Circuit layout and optimization to obtain process insensitivity and first-pass design success are discussed. A comparison is made to a commercially available state-of-the-art 6 to 18 GHz amplifier designed using conventional (lossy-mismatch) topology. The distributed amplifier is shown to have much improved bandwidth, SWR, gain flatness, and insensitivity to process variations, while retaining similar output power and efficiency.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"122 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"A Producible 2 to 20 GHz Monolithic Power Amplifier\",\"authors\":\"Ralph, Hsrlladay, Marty, Jones, Steve Nelson\",\"doi\":\"10.1109/MCS.1987.1114507\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design, fabrication, and performance of a 0.4-W, 2 to 20 GHz distributed amplifier are described in this paper. Small-signal gain is 5 dB and power-added efficiency is 15%. The amplifier is fabricated on ion-implanted GaAs, and achieves excellent performance through use of series gate capacitors and a tapered drain line. Circuit layout and optimization to obtain process insensitivity and first-pass design success are discussed. A comparison is made to a commercially available state-of-the-art 6 to 18 GHz amplifier designed using conventional (lossy-mismatch) topology. The distributed amplifier is shown to have much improved bandwidth, SWR, gain flatness, and insensitivity to process variations, while retaining similar output power and efficiency.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"122 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1987.1114507\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1987.1114507","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Producible 2 to 20 GHz Monolithic Power Amplifier
The design, fabrication, and performance of a 0.4-W, 2 to 20 GHz distributed amplifier are described in this paper. Small-signal gain is 5 dB and power-added efficiency is 15%. The amplifier is fabricated on ion-implanted GaAs, and achieves excellent performance through use of series gate capacitors and a tapered drain line. Circuit layout and optimization to obtain process insensitivity and first-pass design success are discussed. A comparison is made to a commercially available state-of-the-art 6 to 18 GHz amplifier designed using conventional (lossy-mismatch) topology. The distributed amplifier is shown to have much improved bandwidth, SWR, gain flatness, and insensitivity to process variations, while retaining similar output power and efficiency.
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