R. Yamamoto, K. Ueda, H. Nagao, Tadashi Morimura, I. Eguchi, M. Kudoh, K. Kinuhata, P. Nuspl
{"title":"低功耗、高速GaAs LSI板载基带开关矩阵的制备","authors":"R. Yamamoto, K. Ueda, H. Nagao, Tadashi Morimura, I. Eguchi, M. Kudoh, K. Kinuhata, P. Nuspl","doi":"10.1109/MCS.1986.1114481","DOIUrl":null,"url":null,"abstract":"A GaAs LSI On-Board Baseband Switching Matrix (BSM) for use in satellite communications for time-division multiple access (TDMA) system, has been designed and fabricated by using low dissipated Buffered-FET-Logic(BFL) with one level- shifting diode with the FET threshold voltage of about -0.5 V. For a 120 Mbit/s rate traffic signal to be used for TDMA , complete connectivity was confirmed for any possible switching pattern with a fast rise/fall time of about 1 ns at a power dissipation of 160 mW. The switch size is 16x4, expandable up to 16x16 by interbonding.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication of Low Power, High-Speed GaAs LSI On-Board Baseband Switching Matrix\",\"authors\":\"R. Yamamoto, K. Ueda, H. Nagao, Tadashi Morimura, I. Eguchi, M. Kudoh, K. Kinuhata, P. Nuspl\",\"doi\":\"10.1109/MCS.1986.1114481\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A GaAs LSI On-Board Baseband Switching Matrix (BSM) for use in satellite communications for time-division multiple access (TDMA) system, has been designed and fabricated by using low dissipated Buffered-FET-Logic(BFL) with one level- shifting diode with the FET threshold voltage of about -0.5 V. For a 120 Mbit/s rate traffic signal to be used for TDMA , complete connectivity was confirmed for any possible switching pattern with a fast rise/fall time of about 1 ns at a power dissipation of 160 mW. The switch size is 16x4, expandable up to 16x16 by interbonding.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1986.1114481\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1986.1114481","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A GaAs LSI On-Board Baseband Switching Matrix (BSM) for use in satellite communications for time-division multiple access (TDMA) system, has been designed and fabricated by using low dissipated Buffered-FET-Logic(BFL) with one level- shifting diode with the FET threshold voltage of about -0.5 V. For a 120 Mbit/s rate traffic signal to be used for TDMA , complete connectivity was confirmed for any possible switching pattern with a fast rise/fall time of about 1 ns at a power dissipation of 160 mW. The switch size is 16x4, expandable up to 16x16 by interbonding.