A W-Band Monolithic GaAs PIN Diode Switch

Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1986-06-01 DOI:10.1109/MCS.1986.1114478

G. M. Nesbit, D. Wong, D. Li, J. C. Chen

引用次数: 11

Abstract

A state-of-the-art performance has been achieved for a W-band monolithic single-pole-single-throw PIN diode switch. An insertion loss of less than 0.5 dB with return loss greater than 15 dB (transmission mode) and an isolation greater than 11 dB (isolation mode) have been measured over a 6 GHz bandwidth (80 to 86 GHz).

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一种w波段单片砷化镓PIN二极管开关

一种w波段单片单极单掷PIN二极管开关达到了最先进的性能。在6ghz带宽(80 ~ 86ghz)下，测量到插入损耗小于0.5 dB，回波损耗大于15db(传输模式)，隔离度大于11db(隔离模式)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microwave and Millimeter-Wave Monolithic Circuits

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