Fabrication of Low Power, High-Speed GaAs LSI On-Board Baseband Switching Matrix

Abstract

A GaAs LSI On-Board Baseband Switching Matrix (BSM) for use in satellite communications for time-division multiple access (TDMA) system, has been designed and fabricated by using low dissipated Buffered-FET-Logic(BFL) with one level- shifting diode with the FET threshold voltage of about -0.5 V. For a 120 Mbit/s rate traffic signal to be used for TDMA , complete connectivity was confirmed for any possible switching pattern with a fast rise/fall time of about 1 ns at a power dissipation of 160 mW. The switch size is 16x4, expandable up to 16x16 by interbonding.