Monolithic MBE GaAs Pin Diode Limiter

Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1987-06-01 DOI:10.1109/MCS.1987.1114511

D. Seymour, D. Heston, R. Lehmann

引用次数: 14

Abstract

A broadband MBE GaAs PIN/NIP diode limiter has demonstrated 15 dB of isolation with a +32.5 dBm input signal while maintaining less than 0.25 dB of small-signal insertion loss from 0.05 GHz to 14 GHz. These results were obtained by incorporating vertical GaAs PIN/NIP diodes in a shunt-loaded microstrip configuration.

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单片MBE GaAs引脚二极管限幅器

宽带MBE GaAs PIN/NIP二极管限制器在+32.5 dBm输入信号时具有15 dB的隔离，同时在0.05 GHz至14 GHz范围内保持小于0.25 dB的小信号插入损耗。这些结果是通过将垂直GaAs PIN/NIP二极管合并到分流负载微带配置中获得的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Microwave and Millimeter-Wave Monolithic Circuits

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