A 2 to 8 GHz Leveling Loop Using a GaAs MMIC Active Splitter and Attenuator

G. Barta, K. Jones, G. C. Herrick, E. Strid
{"title":"A 2 to 8 GHz Leveling Loop Using a GaAs MMIC Active Splitter and Attenuator","authors":"G. Barta, K. Jones, G. C. Herrick, E. Strid","doi":"10.1109/MCS.1986.1114483","DOIUrl":null,"url":null,"abstract":"A wide-band monolithic GaAs bridged-T variable attenuator has been used with a monolithic GaAs active power splitter to form a compact, 2 to 8 GHz leveling loop for RF sources having a minimum 12dB leveling range with buffered output. The attenuator internally optimizes input and output return loss over a 1 to 10 GHz bandwidth by the use of an on-chip GaAs op-amp. The active power splitter provides unity gain to each port over a 1 to 10 GHz bandwidth by the use of distributed amplification. The entire 4.5 cm by 42 cm subsystem was realized with surface mount packages on RT-Duroid®®.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"71 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1986.1114483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17

Abstract

A wide-band monolithic GaAs bridged-T variable attenuator has been used with a monolithic GaAs active power splitter to form a compact, 2 to 8 GHz leveling loop for RF sources having a minimum 12dB leveling range with buffered output. The attenuator internally optimizes input and output return loss over a 1 to 10 GHz bandwidth by the use of an on-chip GaAs op-amp. The active power splitter provides unity gain to each port over a 1 to 10 GHz bandwidth by the use of distributed amplification. The entire 4.5 cm by 42 cm subsystem was realized with surface mount packages on RT-Duroid®®.
使用GaAs MMIC有源分配器和衰减器的2至8ghz调平环路
宽带单片砷化镓桥接- t可变衰减器已与单片砷化镓有源功率分配器一起使用,形成紧凑的2至8 GHz调平环路,用于具有最小12dB调平范围和缓冲输出的RF源。衰减器内部通过使用片上GaAs运算放大器在1至10 GHz带宽上优化输入和输出返回损耗。有源功率分配器通过使用分布式放大,在1至10 GHz的带宽范围内为每个端口提供单位增益。整个4.5 cm × 42 cm的子系统是用RT-Duroid®®上的表面贴装封装实现的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信