高速砷化镓单片跨阻放大器

Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1986-06-01 DOI:10.1109/MCS.1986.1114476

I. Bahl, E. Griffin, W. Powell, C. Ring

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引用次数: 11

摘要

本文介绍了一种适用于超高速光通信系统的新型跨阻放大器的设计方法和测试结果，该放大器芯片的光灵敏度分别为-38.5、-33、-30和1500 Mb/s四种不同的比特率。放大器提供2v峰对峰输出和30db动态范围。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A High Speed GaAs Monolithic Transimpedance Amplifier

This paper describes the design method and test results for a novel transimpedance amplifier suitable for very high speed optical communications systems The amplifier chip is developed for four different bit rates: 188, 565, 1130, and 1500 Mb/s with optical sensitivities -38.5, -33, -30, dBm, respectively. The amplifier provides 2 V peak to peak output and 30 dB dynamic range.

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Microwave and Millimeter-Wave Monolithic Circuits

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