{"title":"用于Gbit操作的单片光电接收机","authors":"S. Ray, M. Walton","doi":"10.1109/MCS.1986.1114491","DOIUrl":null,"url":null,"abstract":"A monolithic optoelectronic receiver chip was designed and fabricated for operation at 1.0 Gbit/sec data transmission rate. The major components of the receiver chip are a fast photodiode, a preamplifier, and a 1:4 demultiplexer circuit fabricated on semi-insulating GaAs substrate. Optical/electrical functionality has been demonstrated at wafer level.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Monolithic Optoelectronic Receiver for Gbit Operation\",\"authors\":\"S. Ray, M. Walton\",\"doi\":\"10.1109/MCS.1986.1114491\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A monolithic optoelectronic receiver chip was designed and fabricated for operation at 1.0 Gbit/sec data transmission rate. The major components of the receiver chip are a fast photodiode, a preamplifier, and a 1:4 demultiplexer circuit fabricated on semi-insulating GaAs substrate. Optical/electrical functionality has been demonstrated at wafer level.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1986.1114491\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1986.1114491","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monolithic Optoelectronic Receiver for Gbit Operation
A monolithic optoelectronic receiver chip was designed and fabricated for operation at 1.0 Gbit/sec data transmission rate. The major components of the receiver chip are a fast photodiode, a preamplifier, and a 1:4 demultiplexer circuit fabricated on semi-insulating GaAs substrate. Optical/electrical functionality has been demonstrated at wafer level.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
