H. Takakuwa, K. Tanaka, K. Togashi, H. Ohke, M. Kanazawa, Y. Kato
{"title":"采用MOCVD的低噪声微波效应场效应","authors":"H. Takakuwa, K. Tanaka, K. Togashi, H. Ohke, M. Kanazawa, Y. Kato","doi":"10.1109/MCS.1986.1114487","DOIUrl":null,"url":null,"abstract":"Low noise HIFET (Hetero Interface Field Effect Transistor, also known asTEGFET or HEMT) AIGaAs/GaAs heterostructure devices have been developed using Metal Organic Chemical Vapor Deposition (MOCVD). The HIFET's with 0.5-micron long and 200-micron wide gates have shown a minimum noise figure of 0.87 dB with an associated gain of 12.5 dB at 12 GHz at room temperature. A substantial improvement in noise figure was obtained at lower temperatures (-l0°C), especially when compared to GaAs MESFET devices.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"2 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low Noise Microwave HIFET Using MOCVD\",\"authors\":\"H. Takakuwa, K. Tanaka, K. Togashi, H. Ohke, M. Kanazawa, Y. Kato\",\"doi\":\"10.1109/MCS.1986.1114487\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low noise HIFET (Hetero Interface Field Effect Transistor, also known asTEGFET or HEMT) AIGaAs/GaAs heterostructure devices have been developed using Metal Organic Chemical Vapor Deposition (MOCVD). The HIFET's with 0.5-micron long and 200-micron wide gates have shown a minimum noise figure of 0.87 dB with an associated gain of 12.5 dB at 12 GHz at room temperature. A substantial improvement in noise figure was obtained at lower temperatures (-l0°C), especially when compared to GaAs MESFET devices.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"2 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1986.1114487\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1986.1114487","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low noise HIFET (Hetero Interface Field Effect Transistor, also known asTEGFET or HEMT) AIGaAs/GaAs heterostructure devices have been developed using Metal Organic Chemical Vapor Deposition (MOCVD). The HIFET's with 0.5-micron long and 200-micron wide gates have shown a minimum noise figure of 0.87 dB with an associated gain of 12.5 dB at 12 GHz at room temperature. A substantial improvement in noise figure was obtained at lower temperatures (-l0°C), especially when compared to GaAs MESFET devices.
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