{"title":"30ghz多比特单片移相器","authors":"P. Bauhahn, C. Butter, V. Sokolov, A. Contolatis","doi":"10.1109/MCS.1985.1113627","DOIUrl":null,"url":null,"abstract":"The design and performance of GaAs monolithic 3-bit and 4/5 bit switched line phase shifters for Ka-band operation are discussed. Both conventional recessed and self-aligned gate (SAG) switching FET designs are presented. The insertionloss was as low as 2dB per bit for the recessed gate and 2.9 dB per bit with the SAG gate devices for the particular doping levels used.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"30 GHz Multi-Bit Monolithic Phase Shifters\",\"authors\":\"P. Bauhahn, C. Butter, V. Sokolov, A. Contolatis\",\"doi\":\"10.1109/MCS.1985.1113627\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and performance of GaAs monolithic 3-bit and 4/5 bit switched line phase shifters for Ka-band operation are discussed. Both conventional recessed and self-aligned gate (SAG) switching FET designs are presented. The insertionloss was as low as 2dB per bit for the recessed gate and 2.9 dB per bit with the SAG gate devices for the particular doping levels used.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1985.1113627\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1985.1113627","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The design and performance of GaAs monolithic 3-bit and 4/5 bit switched line phase shifters for Ka-band operation are discussed. Both conventional recessed and self-aligned gate (SAG) switching FET designs are presented. The insertionloss was as low as 2dB per bit for the recessed gate and 2.9 dB per bit with the SAG gate devices for the particular doping levels used.
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