{"title":"一种2w ku波段单片GaAs场效应晶体管放大器","authors":"H. Macksey, H. Tserng, H. Shih","doi":"10.1109/MCS.1985.1113631","DOIUrl":null,"url":null,"abstract":"A monolithic three-stage Ku-band GaAs FET power amplifier has been designed, fabricated. Epitaxial layers are grown by molecular beam epitaxy FETs have a source overlay geometry with the n+ ledge channel structure. The amplifiers have up to 2 W output power at 16.5 GHz with 12 dB gain, 20% efficiency.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 2-W Ku-Band Monolithic GaAs FET Amplifier\",\"authors\":\"H. Macksey, H. Tserng, H. Shih\",\"doi\":\"10.1109/MCS.1985.1113631\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A monolithic three-stage Ku-band GaAs FET power amplifier has been designed, fabricated. Epitaxial layers are grown by molecular beam epitaxy FETs have a source overlay geometry with the n+ ledge channel structure. The amplifiers have up to 2 W output power at 16.5 GHz with 12 dB gain, 20% efficiency.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1985.1113631\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1985.1113631","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A monolithic three-stage Ku-band GaAs FET power amplifier has been designed, fabricated. Epitaxial layers are grown by molecular beam epitaxy FETs have a source overlay geometry with the n+ ledge channel structure. The amplifiers have up to 2 W output power at 16.5 GHz with 12 dB gain, 20% efficiency.
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