30 GHz Monolithic Balanced Mixers Using an Ion-Implanted FET-Compatible 3-Inch GaAs Wafer Process Technology

Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1986-06-01 DOI:10.1109/MCS.1986.1114477

P. Bauhahn, A. Contolatis, V. Sokolov, C. Chao

引用次数: 7

Abstract

An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated, tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.

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采用离子注入fet兼容3英寸砷化镓晶圆工艺技术的30 GHz单片平衡混频器

研制了一种截止频率大于1000ghz的全离子注入肖特基势垒混频器二极管。这种新器件是平面和fet兼容的，并采用投影光刻3英寸晶圆工艺。在此基础上设计、制作并测试了一款ka波段单片平衡混频器。用10dbm的LO驱动器在30ghz下测量了8db的转换损耗。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Microwave and Millimeter-Wave Monolithic Circuits

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