Low Noise Microwave HIFET Using MOCVD

Abstract

Low noise HIFET (Hetero Interface Field Effect Transistor, also known asTEGFET or HEMT) AIGaAs/GaAs heterostructure devices have been developed using Metal Organic Chemical Vapor Deposition (MOCVD). The HIFET's with 0.5-micron long and 200-micron wide gates have shown a minimum noise figure of 0.87 dB with an associated gain of 12.5 dB at 12 GHz at room temperature. A substantial improvement in noise figure was obtained at lower temperatures (-l0°C), especially when compared to GaAs MESFET devices.