{"title":"使用GaAs MMIC有源分配器和衰减器的2至8ghz调平环路","authors":"G. Barta, K. Jones, G. C. Herrick, E. Strid","doi":"10.1109/MCS.1986.1114483","DOIUrl":null,"url":null,"abstract":"A wide-band monolithic GaAs bridged-T variable attenuator has been used with a monolithic GaAs active power splitter to form a compact, 2 to 8 GHz leveling loop for RF sources having a minimum 12dB leveling range with buffered output. The attenuator internally optimizes input and output return loss over a 1 to 10 GHz bandwidth by the use of an on-chip GaAs op-amp. The active power splitter provides unity gain to each port over a 1 to 10 GHz bandwidth by the use of distributed amplification. The entire 4.5 cm by 42 cm subsystem was realized with surface mount packages on RT-Duroid®®.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"71 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"A 2 to 8 GHz Leveling Loop Using a GaAs MMIC Active Splitter and Attenuator\",\"authors\":\"G. Barta, K. Jones, G. C. Herrick, E. Strid\",\"doi\":\"10.1109/MCS.1986.1114483\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wide-band monolithic GaAs bridged-T variable attenuator has been used with a monolithic GaAs active power splitter to form a compact, 2 to 8 GHz leveling loop for RF sources having a minimum 12dB leveling range with buffered output. The attenuator internally optimizes input and output return loss over a 1 to 10 GHz bandwidth by the use of an on-chip GaAs op-amp. The active power splitter provides unity gain to each port over a 1 to 10 GHz bandwidth by the use of distributed amplification. The entire 4.5 cm by 42 cm subsystem was realized with surface mount packages on RT-Duroid®®.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"71 6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1986.1114483\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1986.1114483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17
摘要
宽带单片砷化镓桥接- t可变衰减器已与单片砷化镓有源功率分配器一起使用，形成紧凑的2至8 GHz调平环路，用于具有最小12dB调平范围和缓冲输出的RF源。衰减器内部通过使用片上GaAs运算放大器在1至10 GHz带宽上优化输入和输出返回损耗。有源功率分配器通过使用分布式放大，在1至10 GHz的带宽范围内为每个端口提供单位增益。整个4.5 cm × 42 cm的子系统是用RT-Duroid®®上的表面贴装封装实现的。
A 2 to 8 GHz Leveling Loop Using a GaAs MMIC Active Splitter and Attenuator
A wide-band monolithic GaAs bridged-T variable attenuator has been used with a monolithic GaAs active power splitter to form a compact, 2 to 8 GHz leveling loop for RF sources having a minimum 12dB leveling range with buffered output. The attenuator internally optimizes input and output return loss over a 1 to 10 GHz bandwidth by the use of an on-chip GaAs op-amp. The active power splitter provides unity gain to each port over a 1 to 10 GHz bandwidth by the use of distributed amplification. The entire 4.5 cm by 42 cm subsystem was realized with surface mount packages on RT-Duroid®®.
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