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IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers最新文献

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K through Ka-band driver and power amplifiers K到ka波段驱动器和功率放大器
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506297
K. Simon, R. Wohlert, J. Wendler, L. Aucoin, D. Vye
{"title":"K through Ka-band driver and power amplifiers","authors":"K. Simon, R. Wohlert, J. Wendler, L. Aucoin, D. Vye","doi":"10.1109/MCS.1996.506297","DOIUrl":"https://doi.org/10.1109/MCS.1996.506297","url":null,"abstract":"First pass low, medium, and high power MMIC amplifiers operating over the 17 to 40 GHz band have been demonstrated. The low power driver amplifier delivers 8 dBm output power with 8 dB associated gain and the medium power driver amplifier delivers a minimum of 13 dBm with 8 dB associated gain across the band. The high power amplifier delivers 24 dBm output power from 17 to 35 GHz and greater than 22 dBm from 35 to 40 GHz with a minimum of 17.5 dB associated gain. The low power driver amplifier and the high power amplifier were combined to demonstrate a minimum of 22.5 dBm output power with greater than 24.5 dB associated gain across the 17 to 40 GHz band.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121933486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A silicon MOS process for integrated RF power amplifiers 一种集成射频功率放大器的硅MOS工艺
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506333
C. Dragon, J. Costa, D. Lamey, D. Ngo, W. Burger, N. Camilleri
{"title":"A silicon MOS process for integrated RF power amplifiers","authors":"C. Dragon, J. Costa, D. Lamey, D. Ngo, W. Burger, N. Camilleri","doi":"10.1109/MCS.1996.506333","DOIUrl":"https://doi.org/10.1109/MCS.1996.506333","url":null,"abstract":"A silicon-based technology is presented which integrates passive components with a silicon power MOSFET for use in integrated power amplifiers at UHF, VHF, and RF frequencies. This low-cost process incorporates capacitors, inductors, resistors, ground vias, transmission lines, and an ESD protection diode. A design library containing models and layouts for the active and passive components was compiled.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128695112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Three-dimensional MMIC technology for multifunction integration and its possible application to masterslice MMIC 多功能集成的三维MMIC技术及其在主片MMIC中的应用
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506309
T. Tokumitsu, K. Nishikawa, K. Kamogawa, I. Toyoda, M. Aikawa
{"title":"Three-dimensional MMIC technology for multifunction integration and its possible application to masterslice MMIC","authors":"T. Tokumitsu, K. Nishikawa, K. Kamogawa, I. Toyoda, M. Aikawa","doi":"10.1109/MCS.1996.506309","DOIUrl":"https://doi.org/10.1109/MCS.1996.506309","url":null,"abstract":"We first verified that the integration level of multifunction MMICs can be easily increased three-fold by using three-dimensional (3-D) MMIC structure, in comparison to planar ones. The technology was used to build high-density masterslice MMICs on a single footprint in 2/spl times/2 mm by incorporating two levels of ground metals in the 3-D structure.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132576126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
Fully-matched, high-efficiency Q-band 1 watt MMIC solid state power amplifier 全匹配，高效率q波段1瓦MMIC固态功率放大器
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506328
Y. Hwang, P. Chow, J. Lester, J. Chi, D. Garske, M. Biedenbender, R. Lai
{"title":"Fully-matched, high-efficiency Q-band 1 watt MMIC solid state power amplifier","authors":"Y. Hwang, P. Chow, J. Lester, J. Chi, D. Garske, M. Biedenbender, R. Lai","doi":"10.1109/MCS.1996.506328","DOIUrl":"https://doi.org/10.1109/MCS.1996.506328","url":null,"abstract":"A fully-matched, high-efficiency Q-band 1 watt MMIC power amplifier has been developed. This chip utilized 2 mil-thick GaAs substrate to improve amplifier gain, power added efficiency and heat dissipation. 1 watt output power and 30% efficiency was achieved at 44 GHz.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131342836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
MMICs for sensor applications 传感器应用的mmic
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506338
R. Tempel, W. Lutke, J. Herrmann, I. Wolff
{"title":"MMICs for sensor applications","authors":"R. Tempel, W. Lutke, J. Herrmann, I. Wolff","doi":"10.1109/MCS.1996.506338","DOIUrl":"https://doi.org/10.1109/MCS.1996.506338","url":null,"abstract":"A set of three commercial MMICs in coplanar environment have been developed, realized and tested successfully as a cost effective basis for application in 25 GHz sensors. The circuits are designed using a coplanar component library which has been developed at the IMST and was seamlessly integrated into a commercially available circuit design program (HP-EEsof LIBRA).","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132453147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 1.9 GHz single-chip RF front-end GaAs MMIC for personal communications 用于个人通信的1.9 GHz单芯片射频前端GaAs MMIC
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506305
M. Nakayama, K. Mori, N. Ogata, Y. Mitsui, H. Yuura, Y. Yoshii, K. Yamamoto, K. Maemura, O. Ishida
{"title":"A 1.9 GHz single-chip RF front-end GaAs MMIC for personal communications","authors":"M. Nakayama, K. Mori, N. Ogata, Y. Mitsui, H. Yuura, Y. Yoshii, K. Yamamoto, K. Maemura, O. Ishida","doi":"10.1109/MCS.1996.506305","DOIUrl":"https://doi.org/10.1109/MCS.1996.506305","url":null,"abstract":"A single-chip RF front-end GaAs MMIC for the 1.9 GHz Japanese Personal Handy-phone System (PHS) is presented. RF circuits of a high power amplifier (HPA), a T/R switch (SW), two attenuators (ATTs), and a low-noise amplifier (LNA), are integrated with digital circuits of a negative voltage generator (NVG) for HPA and SW gate bias and a logic circuit to control the RF circuits. The HPA has an output power of 21.5 dBm and a high efficiency of 35% with sufficient linearity. The T/R SW combined with a receive step-ATT (0/20 dB) has loss of 1.2 dB (include the ATT loss). The LNA has a gain of 11 dB with noise figure of 1.7 dB, which is self-biased to a steep negative voltage generator during the receive mode. The IC needs only a single voltage (+3 V) DC power supply, and has a logic interface to control each mode for the TDMA/TDD scheme.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116028703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
InAlAs/InGaAs/InP-HEMT technologies for high yield analog/digital ICs 用于高产量模拟/数字ic的InAlAs/InGaAs/InP-HEMT技术
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506316
Y. Umeda, T. Enoki, K. Osafune, H. Ito, Y. Ishii
{"title":"InAlAs/InGaAs/InP-HEMT technologies for high yield analog/digital ICs","authors":"Y. Umeda, T. Enoki, K. Osafune, H. Ito, Y. Ishii","doi":"10.1109/MCS.1996.506316","DOIUrl":"https://doi.org/10.1109/MCS.1996.506316","url":null,"abstract":"High-yield and high-performance digital/analog ICs have been fabricated using the same InAlAs/InGaAs/InP-HEMT process. SCFL static frequency dividers show a fabrication yield of 63% and operate at 36.7/spl plusmn/0.55 GHz. Two-stage MMIC LNAs show a yield of 75% and at 62 GHz a noise figure of 4.3/spl plusmn/0.19 dB and a gain of 11.8/spl plusmn/0.25 dB.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"305 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123205363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Suspended membrane inductors and capacitors for application in silicon MMIC's 应用于硅MMIC的悬浮膜电感和电容器
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506312
Y. Sun, H. Van Zejl, J. Tauritz, R. Baets
{"title":"Suspended membrane inductors and capacitors for application in silicon MMIC's","authors":"Y. Sun, H. Van Zejl, J. Tauritz, R. Baets","doi":"10.1109/MCS.1996.506312","DOIUrl":"https://doi.org/10.1109/MCS.1996.506312","url":null,"abstract":"This paper considers the fabrication and modelling of suspended membrane inductors and capacitors on ordinary silicon substrates. A single post-processing etching step was added to an otherwise standard process. For both components, parasitic capacitances to ground are drastically reduced, enabling high frequency operation. Furthermore, the measured quality factor Q is demonstrably improved with respect to normally fabricated thin film components.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114473896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 72
Monolithic single FET mixers with coplanar technology to convert between V and C band 单片FET混频器与共面技术之间转换的V和C波段
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506311
M. J. Rosário, J. Bernardino, F. Fortes, R. Kulke, T. Sporkman, J. C. Freire
{"title":"Monolithic single FET mixers with coplanar technology to convert between V and C band","authors":"M. J. Rosário, J. Bernardino, F. Fortes, R. Kulke, T. Sporkman, J. C. Freire","doi":"10.1109/MCS.1996.506311","DOIUrl":"https://doi.org/10.1109/MCS.1996.506311","url":null,"abstract":"In this paper the design of single FET coplanar mixers to convert signals between V and C band is presented. A step by step design technique was used, based on harmonic balance simulation. The mixer non-linear device is a PMHFET with a 0.15 /spl mu/m T-gate. Two different topologies were designed, fabricated and tested: cold mixer and drain mixer. The mixers were optimised for minimum conversion losses on the widest possible bandwidth in order to be used on a large number of applications. The experiments show: for the cold mixer, a conversion loss on a 8 GHz band in the range of 8 to 10 dB both as up and downconverter; and 2.5 dB on a 4 GHz band for the drain mixer as down converter.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114219943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Distributed small signal model for multi-fingered GaAs PHEMT/MESFET devices 多指GaAs PHEMT/MESFET器件的分布式小信号模型
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506340
S. Nash, A. Platzker, W. Struble
{"title":"Distributed small signal model for multi-fingered GaAs PHEMT/MESFET devices","authors":"S. Nash, A. Platzker, W. Struble","doi":"10.1109/MCS.1996.506340","DOIUrl":"https://doi.org/10.1109/MCS.1996.506340","url":null,"abstract":"A fully distributed equivalent circuit PHEMT and MESFET model is presented in closed form expressions for single finger end-fed FET geometry. The model includes self and mutual inductances and a new frequency dependent gate resistance. The model was used successfully to model multi-fingered devices which were subjected to equi-phase gate and drain excitations. Comparisons between measured data and model results are shown to be in excellent agreement for all S-parameters to 50 GHz regardless of unit gate width. Scaling issues are also investigated for the new distributed model.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116174442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
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