一种集成射频功率放大器的硅MOS工艺

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI:10.1109/MCS.1996.506333

C. Dragon, J. Costa, D. Lamey, D. Ngo, W. Burger, N. Camilleri

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引用次数: 11

摘要

提出了一种集成无源元件和硅功率MOSFET的硅基技术，用于UHF、VHF和RF频率的集成功率放大器。这种低成本工艺包括电容器、电感、电阻、接地过孔、传输线和ESD保护二极管。编制了包含有源元件和无源元件模型和布局的设计库。

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A silicon MOS process for integrated RF power amplifiers

A silicon-based technology is presented which integrates passive components with a silicon power MOSFET for use in integrated power amplifiers at UHF, VHF, and RF frequencies. This low-cost process incorporates capacitors, inductors, resistors, ground vias, transmission lines, and an ESD protection diode. A design library containing models and layouts for the active and passive components was compiled.

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来源期刊

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

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