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IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers最新文献

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A MMIC radar chip for use in air-to-air missile fuzing applications 用于空对空导弹引信应用的MMIC雷达芯片
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506332
M. Pollman, P. Katzin, B. Bedard, V. Aparin, W. Grammer, R. Orgusaar
{"title":"A MMIC radar chip for use in air-to-air missile fuzing applications","authors":"M. Pollman, P. Katzin, B. Bedard, V. Aparin, W. Grammer, R. Orgusaar","doi":"10.1109/MCS.1996.506332","DOIUrl":"https://doi.org/10.1109/MCS.1996.506332","url":null,"abstract":"The next generation of air-to-air missiles will require Target Detecting Devices (TDD) that must utilize directional target sensing to optimize weapon effectiveness. Conventionally, a centralized radar proximity sensor is switched sequentially between fixed directional antennas elements to provide the required directionality. This implementation involves expensive and bulky RF cabling and switching circuits to connect the TDD to each antenna element. By utilizing Microwave Monolithic Integrated Circuit (MMIC) technology, a single radar chip has been developed which allows for the simultaneous operation of ultra-miniature, low-cost fuze sensors which are mounted onto the backside of each antenna element, obviating the need for RF switches and cabling. The MMIC described includes all the RF circuitry required to operate each radar sensor synchronously (phased-locked) to a common low frequency clock signal. This allows all directional fuze sensors to be operated simultaneously without mutual interference, and results in an attractive, low-cost, miniaturized TDD electronic package.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124211674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A novel MMIC source impedance tuner for on-wafer microwave noise parameter measurements 一种用于片上微波噪声参数测量的新型MMIC源阻抗调谐器
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506318
C. Collins, R. Pollard, R. Miles
{"title":"A novel MMIC source impedance tuner for on-wafer microwave noise parameter measurements","authors":"C. Collins, R. Pollard, R. Miles","doi":"10.1109/MCS.1996.506318","DOIUrl":"https://doi.org/10.1109/MCS.1996.506318","url":null,"abstract":"A novel GaAs HEMT MMIC source impedance tuner is reported which can be incorporated into a wafer probe tip. This eliminates the effect of cable and probe losses on reflection coefficient, which enables higher magnitudes to be synthesized at the test device input than for conventional tuners, potentially increasing noise parameter measurement accuracy.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115785490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 47
Low DC power monolithic low noise amplifier for wireless applications at 5 GHz 用于5 GHz无线应用的低直流功率单片低噪声放大器
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506308
U. Lott
{"title":"Low DC power monolithic low noise amplifier for wireless applications at 5 GHz","authors":"U. Lott","doi":"10.1109/MCS.1996.506308","DOIUrl":"https://doi.org/10.1109/MCS.1996.506308","url":null,"abstract":"A two stage monolithic integrated low noise amplifier for applications in the wireless data frequency range of 5 to 6 GHz has been designed. A noise figure of 3.5 dB with a gain of 15 dB has been achieved using enhancement MESFETs only. The LNA draws 3 mA from a 3.3 V supply, achieving a gain/P/sub Dc/ figure of merit of 1.5 dB/mW.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128939215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Low-voltage broadband BiCMOS MMICs for low-cost high-speed wireless networks applications 用于低成本高速无线网络应用的低压宽带BiCMOS mmic
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506303
M. Madihian
{"title":"Low-voltage broadband BiCMOS MMICs for low-cost high-speed wireless networks applications","authors":"M. Madihian","doi":"10.1109/MCS.1996.506303","DOIUrl":"https://doi.org/10.1109/MCS.1996.506303","url":null,"abstract":"This paper describes low-voltage BiCMOS MMICs for wireless personal communication applications. Design considerations and performance results for a developed 2 V 1.6-6.2 GHz MMIC family including bipolar-based RF amplifiers, MOS-based IF amplifiers, BiCMOS-based simplified Gilbert mixers, and downconverter as well as upconverter IC's are presented.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133005660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A microwave radar for vehicular applications 一种车载微波雷达
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506292
S. Thompson
{"title":"A microwave radar for vehicular applications","authors":"S. Thompson","doi":"10.1109/MCS.1996.506292","DOIUrl":"https://doi.org/10.1109/MCS.1996.506292","url":null,"abstract":"A Commercial Side Detection System (SDS) sensor based on microwave radar technology for commercial vehicular applications is introduced. The design, manufacture, and function of the SDS sensor are described. Some important aspects of the use of microwave radar on vehicles are discussed and the benefits to the vehicle operator are summarized.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129960756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
High efficiency power HFETs for low power wireless applications [AlGaAs/InGaAs devices] 用于低功耗无线应用的高效功率hfet [AlGaAs/InGaAs器件]
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506294
V. Nair, S. Tehrani, D. Halchin, E. Glass, E. Fisk, M. Majerus
{"title":"High efficiency power HFETs for low power wireless applications [AlGaAs/InGaAs devices]","authors":"V. Nair, S. Tehrani, D. Halchin, E. Glass, E. Fisk, M. Majerus","doi":"10.1109/MCS.1996.506294","DOIUrl":"https://doi.org/10.1109/MCS.1996.506294","url":null,"abstract":"This paper discusses the development of depletion mode heterojunction FETs (HFETs) for high efficiency power amplifiers. At 850 MHz, a 12 mm HFET achieved power added efficiency of 72% and an output power of +31.5 dBm at V/sub ds/=3.0 V. An optimized HFET achieved 73% power added efficiency and 30 dBm output power at V/sub ds/=2.0 V. These devices also exhibited a 12 dB improvement in out-of-band noise performance compared to ion implanted MESFETs.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124965051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Performance comparison of 1 watt Ka-band MMIC amplifiers using pseudomorphic HEMTs and ion-implanted MESFETs 采用假晶hemt和离子注入mesfet的1瓦ka波段MMIC放大器的性能比较
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506295
R. Yarborough, P. Saunier, H. Tserng
{"title":"Performance comparison of 1 watt Ka-band MMIC amplifiers using pseudomorphic HEMTs and ion-implanted MESFETs","authors":"R. Yarborough, P. Saunier, H. Tserng","doi":"10.1109/MCS.1996.506295","DOIUrl":"https://doi.org/10.1109/MCS.1996.506295","url":null,"abstract":"We have demonstrated a high-gain, high-efficiency Ka band three-stage MMIC power amplifier providing >1 watt CW output power, >20 dB power gain, with an average 35% power-added efficiency (378 peak) over a 26.5 to 28 GHz band using 0.25 /spl mu/m AlGaAs/InGaAs pseudomorphic HEMT (HEMT) process technology. The pHEMT amplifiers exhibit third-order intermodulation products >29 dBc with the output power backed off by 5 dB. As an alternate low-cost solution, we processed three wafers of the Ka-band monolithic amplifier designed with pHEMT technology using direct ion-implanted 0.2 /spl mu/m GaAs MESFETs achieving >1 watt CW output power, >18 dB power gain, with an average 24% power-added efficiency (27% peak) over the band. The MESFET amplifiers demonstrate third-order intermodulation products >21 dBc with the output power backed off by 5 dB. All amplifier results reported here contain no de-embedding of fixture and connector losses. This paper presents 0.25 /spl mu/m pHEMT and 0.2 pm MESFET device results, as well as amplifier design and performance over a 26.5 to 28 GHz band.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121967773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
A silicon BiCMOS transceiver front-end MMIC covering 900 and 1900 MHz applications 一个硅BiCMOS收发器前端MMIC覆盖900和1900兆赫应用
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506306
W. Titus, M. Shifrin, V. Asparin, B. Bedard
{"title":"A silicon BiCMOS transceiver front-end MMIC covering 900 and 1900 MHz applications","authors":"W. Titus, M. Shifrin, V. Asparin, B. Bedard","doi":"10.1109/MCS.1996.506306","DOIUrl":"https://doi.org/10.1109/MCS.1996.506306","url":null,"abstract":"A silicon BiCMOS transceiver front-end consisting of a low noise amplifier, power amplifier, and SPDT switch is described. The chip runs off a 5 V supply and requires a single CMOS/TTL control line for switch control. The LNA path has a 22 dB gain and 4 dB noise figure at 900 MHz. The PA has a gain of 22 dB and an output power of 15 dBm. The SPDT switch has an insertion loss of 1.3 dB, and an isolation of 22 dB at 900 MHz.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125966554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A high-performance broadband MMIC PHEMT resistive drain mixer for 28-40 GHz band PCN applications 一款高性能宽带MMIC PHEMT电阻漏极混频器，适用于28-40 GHz频段PCN应用
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506301
F. Cardinal, H. An, I. Mag, R. Smith
{"title":"A high-performance broadband MMIC PHEMT resistive drain mixer for 28-40 GHz band PCN applications","authors":"F. Cardinal, H. An, I. Mag, R. Smith","doi":"10.1109/MCS.1996.506301","DOIUrl":"https://doi.org/10.1109/MCS.1996.506301","url":null,"abstract":"A high performance broadband millimeter wave MMIC upconvertor is reported in this paper. The MMIC mixer has a singly balanced configuration and uses two 0.18 /spl mu/m PHEMT transistors working at resistive drain mixing mode, in which the LO signal is injected to drains, IF to gate via DC bias circuits, and RF signal output from gates. The mixer presents 1-6 dB conversion loss including all losses in the test board (made of 10 mil Duroid substrate) for 27.5-41 GHz LO band and 0.1-1.2 GHz IF band. The P/sub 1dB/ of IF input power is 0 dBm, and good LO-RF suppression with 50 dB at 37.5 GHz. The mixer has been successfully integrated into a 38 GHz PCN demonstrative system in which 64 QAM modulation-demodulation was realized.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126424412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 15/60 GHz one-stage MMIC frequency quadrupler 15/60 GHz单级MMIC频率四倍器
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506298
K. Shirakawa, Y. Kawasaki, Y. Ohashi, N. Okubo
{"title":"A 15/60 GHz one-stage MMIC frequency quadrupler","authors":"K. Shirakawa, Y. Kawasaki, Y. Ohashi, N. Okubo","doi":"10.1109/MCS.1996.506298","DOIUrl":"https://doi.org/10.1109/MCS.1996.506298","url":null,"abstract":"We have developed a 15/60 GHz one-stage MMIC frequency quadrupler using a 0.25-/spl mu/m AlGaAs/GaAs HEMT. The HEMT was characterized by our empirical large-signal model, in which charge conservation and dispersion are taken into consideration. We included this model in a commercially-available harmonic balance circuit simulator, and designed the one-stage quadrupler. The fabricated MMIC quadrupler has a conversion gain of -5 dBm with -5 dBm of output power for a 0 dBm input signal.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116902901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
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