一个硅BiCMOS收发器前端MMIC覆盖900和1900兆赫应用

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI:10.1109/MCS.1996.506306

W. Titus, M. Shifrin, V. Asparin, B. Bedard

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引用次数: 3

摘要

介绍了一种由低噪声放大器、功率放大器和SPDT开关组成的硅BiCMOS收发器前端。该芯片运行在5v电源上，需要一条CMOS/TTL控制线进行开关控制。LNA路径在900 MHz时具有22 dB增益和4 dB噪声系数。扩音器增益为22 dB，输出功率为15 dBm。SPDT开关在900 MHz时的插入损耗为1.3 dB，隔离度为22 dB。

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A silicon BiCMOS transceiver front-end MMIC covering 900 and 1900 MHz applications

A silicon BiCMOS transceiver front-end consisting of a low noise amplifier, power amplifier, and SPDT switch is described. The chip runs off a 5 V supply and requires a single CMOS/TTL control line for switch control. The LNA path has a 22 dB gain and 4 dB noise figure at 900 MHz. The PA has a gain of 22 dB and an output power of 15 dBm. The SPDT switch has an insertion loss of 1.3 dB, and an isolation of 22 dB at 900 MHz.

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来源期刊

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

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