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IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers最新文献

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A GaAs single chip 2.4 GHz PLL frequency multiplier 一种GaAs单片机2.4 GHz锁相环倍频器
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506299
W. Baumberger, M. Schmatz
{"title":"A GaAs single chip 2.4 GHz PLL frequency multiplier","authors":"W. Baumberger, M. Schmatz","doi":"10.1109/MCS.1996.506299","DOIUrl":"https://doi.org/10.1109/MCS.1996.506299","url":null,"abstract":"A monolithic GaAs frequency synthesizer/multiplier for the 2.4 GHz ISM band is presented. The single chip device consists of a VCO, a prescaler /spl divide/16, a phase detector and a loop filter. Measured phase noise is -102 dBc/Hz at 100 kHz offset while the frequency of operation covers 2.3 GHz to 2.55 GHz. The device runs from a single 5 V supply and delivers +3 dBm of RF output power. The chip was mounted in a plastic package and a ready to use demonstrator board was designed.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127636260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Advances in GaAs HBT power amplifiers for cellular phones and military applications 用于移动电话和军事应用的GaAs HBT功率放大器的进展
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506304
F. Ali, A. Gupta, A. Higgins
{"title":"Advances in GaAs HBT power amplifiers for cellular phones and military applications","authors":"F. Ali, A. Gupta, A. Higgins","doi":"10.1109/MCS.1996.506304","DOIUrl":"https://doi.org/10.1109/MCS.1996.506304","url":null,"abstract":"This paper provides a synopsis of the research and development efforts in the USA in power amplifiers designed with GaAs Heterojunction Bipolar Transistor (HBT) technology. Design issues, performance and reliability of power amplifiers using AlGaAs/GaAs HBTs for RF, microwave and millimeter-wave applications are discussed. Key device parameters influencing different frequency applications are highlighted.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"201 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123017626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Ultra low noise Q-band monolithic amplifiers using InP- and GaAs-based 0.1 /spl mu/m HEMT technologies 超低噪声q波段单片放大器，采用基于InP和gaas的0.1 /spl mu/m HEMT技术
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506310
M. Aust, T. Huang, M. Dufault, H. Wang, D. Lo, R. Lai, M. Biedenbender, C.C. Yang
{"title":"Ultra low noise Q-band monolithic amplifiers using InP- and GaAs-based 0.1 /spl mu/m HEMT technologies","authors":"M. Aust, T. Huang, M. Dufault, H. Wang, D. Lo, R. Lai, M. Biedenbender, C.C. Yang","doi":"10.1109/MCS.1996.506310","DOIUrl":"https://doi.org/10.1109/MCS.1996.506310","url":null,"abstract":"Design and development of ultra low noise MMIC Q-band LNAs using both InP- and GaAs-based 0.1 /spl mu/m HEMT technologies with state-of-the-art noise figures are reported in this paper. For InAlAs-InGaAs-InP HEMT LNAs, we have achieved noise figure performance as low as 1.6 dB with 10 dB associated gain for a one-stage LNA. With a two stage design, 20 dB gain with 1.8 dB noise figure was obtained. Single- and multistage MMIC LNAs were also designed and fabricated using a production 0.1 /spl mu/m AlGaAs-InGaAs-GaAs HEMT process. A four-stage LNA also demonstrated 2.5 dB noise figure with 28 dB gain, which is the best MMIC LNA result ever reported for on GaAs-based HEMTs.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"234 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123036993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
An investigation of IM3 distortion in relation to bypass capacitor of GaAs MMIC's 砷化镓MMIC旁通电容对IM3畸变的影响
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506317
H. Kawasaki, T. Ohgihara, Y. Murakami
{"title":"An investigation of IM3 distortion in relation to bypass capacitor of GaAs MMIC's","authors":"H. Kawasaki, T. Ohgihara, Y. Murakami","doi":"10.1109/MCS.1996.506317","DOIUrl":"https://doi.org/10.1109/MCS.1996.506317","url":null,"abstract":"IM3 distortion in relation to a bypass capacitor of a GaAs MMIC has been investigated. Through non-linear simulation and the measurement of a 1-stage MMIC amplifier, it was shown that only IM3 performance depended on the bypass capacitor. A new analytical model of IF amplitude modulation for the 2-tone RF carrier outputs is proposed. Based upon this model, the RF carrier outputs were distorted from the amplitude modulation by IF of the 2-tone carriers when the output matching circuit was of high impedance at the IF.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121507045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A novel type of constant impedance traveling wave phase shifter for InP-based MMICs 一种新型的恒阻抗行波移相器
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506335
R. Kremer, S. Redlich, L. Brings, D. Jager
{"title":"A novel type of constant impedance traveling wave phase shifter for InP-based MMICs","authors":"R. Kremer, S. Redlich, L. Brings, D. Jager","doi":"10.1109/MCS.1996.506335","DOIUrl":"https://doi.org/10.1109/MCS.1996.506335","url":null,"abstract":"The paper presents a novel type of externally controllable phase shifter based on periodic coplanar transmission lines consisting of Schottky contact (SCCPL) and coplanar sections on a passive substrate. The modeling of the devices is carried out by utilizing a four-pole representation of the underlying /spl pi/-sections. An optimized InP-InGaAs-InAlAs layer structure for the SCCPL is developed providing an external electronic control. Measured phase shifts up to 60/spl deg//mm at 20 GHz with a line impedance of 48/spl plusmn/1.2 /spl Omega/ agree well with theoretical calculations.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131434402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A novel loss compensation technique for high-Q broad-band active inductors 一种新型高q宽带有源电感损耗补偿技术
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506313
H. Hayashi, M. Muraguchi, Y. Umeda, T. Enoki
{"title":"A novel loss compensation technique for high-Q broad-band active inductors","authors":"H. Hayashi, M. Muraguchi, Y. Umeda, T. Enoki","doi":"10.1109/MCS.1996.506313","DOIUrl":"https://doi.org/10.1109/MCS.1996.506313","url":null,"abstract":"A novel loss compensation technique for high-Q broad-band active inductors is proposed. This yields frequency insensitive negative resistance to compensate constant internal losses. Measured frequency range is 6 to 20 GHz for Q values greater than 100 and 7 to 15 GHz for Q values greater than 1000.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131165539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
A broadband planar monolithic ring mixer 宽带平面单片环形混频器
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506302
S. Maas, M. Kintis, F. Fong, M. Tan
{"title":"A broadband planar monolithic ring mixer","authors":"S. Maas, M. Kintis, F. Fong, M. Tan","doi":"10.1109/MCS.1996.506302","DOIUrl":"https://doi.org/10.1109/MCS.1996.506302","url":null,"abstract":"This paper reports the development of a mixer having RF and LO bands of 3 to 11 GHz and an overlapping IF of 1 to 11 GHz. This was achieved through the use of novel planar spiral RF and LO baluns and a new type of four-wire IF balun. We believe that this is the broadest-bandwidth planar monolithic mixer having an overlapped IF reported to date.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133216607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
An ion-implanted 13 watt C-band MMIC with 60% peak power added efficiency 离子注入的13瓦c波段MMIC具有60%的峰值功率，增加了效率
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506296
W. Pribble, E. Griffin
{"title":"An ion-implanted 13 watt C-band MMIC with 60% peak power added efficiency","authors":"W. Pribble, E. Griffin","doi":"10.1109/MCS.1996.506296","DOIUrl":"https://doi.org/10.1109/MCS.1996.506296","url":null,"abstract":"A GaAs MMIC power amplifier that produces in excess of 13 watts of RF power at 60% peak power added efficiency operating in C-band has been developed. Output power over 12 watts at better than 52% PAE has been measured over a 23% fractional bandwidth. The nominal circuit has been designed using non-linear modelling techniques and optimized empirically through fabrication and analysis of an 18-element Taguchi orthogonal array of circuits. The array circuits have been fabricated using ITT-GTC's Multi-Function Self Aligned Gate process.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133096226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A quenchable GaAs HBT X-band VCO for switched band synthesizer architectures 用于开关带合成器结构的可淬灭GaAs HBT x波段压控振荡器
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506314
K. Kobayashi, D.M. Smith, C. Kau, A. Oki, A.K. Sharma, B. Allen, D. Streit
{"title":"A quenchable GaAs HBT X-band VCO for switched band synthesizer architectures","authors":"K. Kobayashi, D.M. Smith, C. Kau, A. Oki, A.K. Sharma, B. Allen, D. Streit","doi":"10.1109/MCS.1996.506314","DOIUrl":"https://doi.org/10.1109/MCS.1996.506314","url":null,"abstract":"The authors have achieved the lowest phase noise reported for an HBT VCO at X-band. The VCO employs an off-chip quarter-wave open stub microstrip resonator fabricated on a 50 mil quartz substrate and a shunt-varactor diode for frequency tuning. At a center frequency of 8.9 GHz, the VCO achieves -103 to -105 dBc/Hz at 100 kHz over a tuning bandwidth of 140 MHz (1.6%). By reducing the unloaded Q of the microstrip resonator, a 770 MHz tuning bandwidth (8.6%) can be achieve with a phase noise ranging from -98.5 to 100.5 dBc/Hz. Without a tuning varactor, a record minimum phase noise of -112 dBc/Hz was achieved at a center frequency of 8.3 GHz which benchmarks the lowest reported phase noise achieved for an HBT oscillator at X-band. The HBT VCO MMIC features a monolithically integrated PIN diode quench circuit which enables the VCO to be used in switchband synthesizer applications.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124972800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A high efficiency complementary GaAs power FET technology for single supply portable applications 用于单电源便携式应用的高效率互补GaAs功率场效应管技术
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506342
E. Glass, J. Abrokwah, R. Lucero, E. Spears, J. Rollman, J. Huang, B. Bernhardt, B. Ooms
{"title":"A high efficiency complementary GaAs power FET technology for single supply portable applications","authors":"E. Glass, J. Abrokwah, R. Lucero, E. Spears, J. Rollman, J. Huang, B. Bernhardt, B. Ooms","doi":"10.1109/MCS.1996.506342","DOIUrl":"https://doi.org/10.1109/MCS.1996.506342","url":null,"abstract":"A high efficiency enhancement mode power heterostructure FET has been developed for single supply portable applications. The device requires only a single 3 V supply for operation, making it an ideal candidate for portable applications. At 850 MHz, a 1.0 /spl mu/m/spl times/12 mm N-type FET exhibited a power output of +30.7 dBm, power gain of 10.6 dB, and a power-added efficiency of 60%, at a drain to source voltage of 3 V, and drain to source quiescent current of 150 mA. This device was fabricated on a standard Complementary GaAs (CGaAs) process flow, which is capable of simultaneously building low-voltage, low-power digital circuits (200 MHz), high-speed digital circuits (5 GHz), and RF power circuits (900 MHz).","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124392531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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