IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers最新文献

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Monolithic VCO using a novel active inductor 采用新型有源电感的单片压控振荡器
Y. Cho, Songcheol Hong, Young-Se Kwon
{"title":"Monolithic VCO using a novel active inductor","authors":"Y. Cho, Songcheol Hong, Young-Se Kwon","doi":"10.1109/MCS.1996.506325","DOIUrl":"https://doi.org/10.1109/MCS.1996.506325","url":null,"abstract":"A novel high-Q tunable active inductor utilizing a common-source cascode FET with a lossy active inductor feedback is described. Using this active inductor, we propose a monolithic VCO with a frequency tuning range from 1.66 GHz to 2.2 GHz in a compact area of 0.7/spl times/1.2 mm/sup 2/.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125287374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs 使用InP hemt的高性能,高产量毫米波MMIC LNAs
L. Tran, R. Isobe, M. Delaney, R. Rhodes, D. Jang, J. Brown, L. Nguyen, M. Le, M. Thompson, T. Liu
{"title":"High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs","authors":"L. Tran, R. Isobe, M. Delaney, R. Rhodes, D. Jang, J. Brown, L. Nguyen, M. Le, M. Thompson, T. Liu","doi":"10.1109/MCS.1996.506320","DOIUrl":"https://doi.org/10.1109/MCS.1996.506320","url":null,"abstract":"A millimeter-wave MMIC low noise amplifier chip set has been developed. Based on the InP HEMT technology, these LNAs provide state-of-the-art performance as well as excellent yield and repeatability. With greater than 50% chip yield, a three-stage Q-band LNA design achieved 26 to 31 dB of gain from 42 to 50 GHz and 1.8 dB average noise figure from 43.3 to 45.7 GHz. In addition, there are six other LNA designs including a four-stage V-band LNA with 28 dB of gain and 2.3 dB noise figure and a two-stage balanced Q-band LNA that provided 17 dB of gain and has greater than 61% yield.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127176346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
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