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IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers最新文献

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A linear Class AB single-ended to differential transconverter suitable for RF circuits 一种适用于射频电路的线性AB类单端对差分变换器
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1996.506339
J. Durec, E. Main
{"title":"A linear Class AB single-ended to differential transconverter suitable for RF circuits","authors":"J. Durec, E. Main","doi":"10.1109/MCS.1996.506339","DOIUrl":"https://doi.org/10.1109/MCS.1996.506339","url":null,"abstract":"A novel circuit topology is presented which converts a single-ended signal into differential output currents with improved linearity. This cell operates in Class AB, allowing an output current greater than the quiescent current. A configuration which allows for the nulling of the third order distortion is derived and the implications of third order nulling on third order intermodulation is explained. Measured results of this cell implemented in 0.4 /spl mu/m silicon-bipolar technology are presented.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124856407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 60 GHz-band low noise HJFET amplifier module for wireless LAN applications 用于无线局域网应用的60 ghz频段低噪声HJFET放大器模块
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1996.506321
K. Maruhashi, M. Funabashi, T. Inoue, M. Madihian, M. Kuzuhara
{"title":"A 60 GHz-band low noise HJFET amplifier module for wireless LAN applications","authors":"K. Maruhashi, M. Funabashi, T. Inoue, M. Madihian, M. Kuzuhara","doi":"10.1109/MCS.1996.506321","DOIUrl":"https://doi.org/10.1109/MCS.1996.506321","url":null,"abstract":"A 60 GHz-band low noise amplifier (LNA) module has been developed based on 0.15 /spl mu/m AlGaAs/InGaAs heterojunction FET(HJFET) technologies. A two-stage MMIC amplifier was designed and fabricated, which exhibited a noise figure less than 3 dB with a gain higher than 10 dB over 59.5 to 61.5 GHz range. For the module fabrication, two MMIC chips were mounted in a WR-15 waveguide housing. The four-stage amplifier module demonstrated a noise figure of 4 dB and a gain higher than 24 dB from 59 to 60 GHz. To our knowledge, this is the best reported noise figure including a microstrip-to-waveguide transition loss, using GaAs-based MMICs operating at this frequency range. The measured output power for the module at 1 dB gain compression point was 4 dBm. Temperature test from -20 to 70/spl deg/C revealed very small noise figure and gain variations of 0.35 dB and 0.62 dB, respectively.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129873009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaAs monolithic integrated microwave power sensor in coplanar waveguide technology 共面波导技术中的砷化镓单片集成微波功率传感器
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1996.506331
A. Dehé, H. Klingbeil, V. Krozer, K. Fricke, K. Beilenhoff, H. Hartnagel
{"title":"GaAs monolithic integrated microwave power sensor in coplanar waveguide technology","authors":"A. Dehé, H. Klingbeil, V. Krozer, K. Fricke, K. Beilenhoff, H. Hartnagel","doi":"10.1109/MCS.1996.506331","DOIUrl":"https://doi.org/10.1109/MCS.1996.506331","url":null,"abstract":"We present the fabrication technology, theoretical and experimental results of a novel MMIC compatible broadband power sensor. With a 50 /spl Omega/ coplanar waveguide design, integrated AlGaAs thermoelectric sensor and GaAs bulk micromachined membrane for increased sensitivity, this sensor is capable of detecting RF power with a sensitivity of 1.1 V/W without any waveguide coupling structure.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117237997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
MMICs for commercial applications: the low-cost high volume production techniques 用于商业应用的mmic:低成本大批量生产技术
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1996.506291
R. Hess
{"title":"MMICs for commercial applications: the low-cost high volume production techniques","authors":"R. Hess","doi":"10.1109/MCS.1996.506291","DOIUrl":"https://doi.org/10.1109/MCS.1996.506291","url":null,"abstract":"This presentation will cover the new and expanding commercial markets and applications for Microwave and Millimeter-Wave Integrated Circuits. Topics include the market demand and growth, as well as examples of how the many companies addressing these demands are approaching the new volume requirements. A discussion of volume/cost relationships is presented, along with techniques for reducing the cost and increasing functionality of Microwave and Millimeter-Wave Integrated Circuits. Specific examples from different companies are explored with lessons learned.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124133983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A technique for deriving noise-parameters of millimeter-wave low-noise HEMTs and its application to MMIC LNA design 毫米波低噪声hemt噪声参数的推导技术及其在MMIC LNA设计中的应用
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1996.506324
H. Yoshinaga, Y. Kashiwabara, B. Abe, K. Shibata
{"title":"A technique for deriving noise-parameters of millimeter-wave low-noise HEMTs and its application to MMIC LNA design","authors":"H. Yoshinaga, Y. Kashiwabara, B. Abe, K. Shibata","doi":"10.1109/MCS.1996.506324","DOIUrl":"https://doi.org/10.1109/MCS.1996.506324","url":null,"abstract":"An on-wafer tuning method has been applied to derive noise parameters of pseudomorphic HEMTs measured at W-band and K-band. As an application of the method, a K-band MMIC LNA with 1.6 dB NF and greater than 32 dB gain has been successfully developed.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131912917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
26 GHz coplanar SiGe MMICs
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1996.506337
C. Rheinfelder, K. Strohm, F. Beisswanger, J. Gerdes, F. Schmuckle, J. Luy, W. Heinrich
{"title":"26 GHz coplanar SiGe MMICs","authors":"C. Rheinfelder, K. Strohm, F. Beisswanger, J. Gerdes, F. Schmuckle, J. Luy, W. Heinrich","doi":"10.1109/MCS.1996.506337","DOIUrl":"https://doi.org/10.1109/MCS.1996.506337","url":null,"abstract":"First results on coplanar MMICs with SiGe HBTs are presented. The circuits are fabricated on high-resistivity Si substrates using a double-mesa HBT process. In the Ka-band, an oscillator output power of 1 dBm and 4.4 dB gain for a one-stage amplifier are achieved. This demonstrates the potential of SiGe transistors for applications in the higher microwave range.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123095190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Status of InP HEMT technology for microwave receiver applications 微波接收机用InP HEMT技术的现状
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1996.506319
P.M. Smith
{"title":"Status of InP HEMT technology for microwave receiver applications","authors":"P.M. Smith","doi":"10.1109/MCS.1996.506319","DOIUrl":"https://doi.org/10.1109/MCS.1996.506319","url":null,"abstract":"The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at which this new technology can be inserted into microwave systems-material/process maturity and long-term reliability-are discussed.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133726705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Frequency translation MMICs using InP HEMT technology 使用InP HEMT技术的频率转换mmic
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1996.506334
L. Tran, M. Delaney, R. Isobe, D. Jang, J. Brown
{"title":"Frequency translation MMICs using InP HEMT technology","authors":"L. Tran, M. Delaney, R. Isobe, D. Jang, J. Brown","doi":"10.1109/MCS.1996.506334","DOIUrl":"https://doi.org/10.1109/MCS.1996.506334","url":null,"abstract":"Frequency translation circuits are key elements in communication systems. This paper presents three different frequency multipliers and a frequency mixer designed using the InP HEMT technology. These successful first iteration MMICs are highlighted by a V-band frequency quadrupler that has 14.25 dB conversion gain with +3.25 dBm output power and a V-band mixer that has 10 dB conversion loss over a 12 GHz bandwidth.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129576098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High efficiency X-Ku band MMIC power amplifiers 高效率X-Ku波段MMIC功率放大器
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1996.506327
M. Cardullo, C. Page, D. Teeter, A. Platzker
{"title":"High efficiency X-Ku band MMIC power amplifiers","authors":"M. Cardullo, C. Page, D. Teeter, A. Platzker","doi":"10.1109/MCS.1996.506327","DOIUrl":"https://doi.org/10.1109/MCS.1996.506327","url":null,"abstract":"MMIC power amplifiers with 3.5 W nominal output power and 49.5% peak power added efficiency over the 8-14 GHz band are described. Efficiency in excess of 40% is obtained over much of the band. The amplifiers utilize Raytheon's power PHEMT technology. Details of the device performance, circuit design, and evaluation are given. The results presented represent state of the art performance for MMIC circuits over X-Ku band.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115906224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A practical MMIC negative resistance structure for X and Ku band applications 一个实用的MMIC负电阻结构，用于X和Ku波段的应用
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1996.506330
M. R. Moazzam, M. Darvishzadeh
{"title":"A practical MMIC negative resistance structure for X and Ku band applications","authors":"M. R. Moazzam, M. Darvishzadeh","doi":"10.1109/MCS.1996.506330","DOIUrl":"https://doi.org/10.1109/MCS.1996.506330","url":null,"abstract":"This paper presents the mathematical analysis and measured results of a novel practical MMIC negative resistance structure. This structure operates at X and Ku bands. The measured results show a negative resistance (down to -50 /spl Omega/) over a 6 GHz bandwidth centered at 11 GHz.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127252920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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