A technique for deriving noise-parameters of millimeter-wave low-noise HEMTs and its application to MMIC LNA design

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI:10.1109/MCS.1996.506324

H. Yoshinaga, Y. Kashiwabara, B. Abe, K. Shibata

引用次数: 0

Abstract

An on-wafer tuning method has been applied to derive noise parameters of pseudomorphic HEMTs measured at W-band and K-band. As an application of the method, a K-band MMIC LNA with 1.6 dB NF and greater than 32 dB gain has been successfully developed.

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毫米波低噪声hemt噪声参数的推导技术及其在MMIC LNA设计中的应用

采用片上调谐方法推导了w波段和k波段伪晶hemt的噪声参数。作为该方法的应用，已成功开发出NF为1.6 dB、增益大于32 dB的k波段MMIC LNA。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

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