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IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers最新文献

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A miniaturized GaAs power amplifier for 1.5 GHz digital cellular phones 用于1.5 GHz数字蜂窝电话的小型化GaAs功率放大器
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506293
S. Makioka, S. Enomoto, H. Furukawa, K. Tateoka, N. Yoshikawa, K. Kanazawa
{"title":"A miniaturized GaAs power amplifier for 1.5 GHz digital cellular phones","authors":"S. Makioka, S. Enomoto, H. Furukawa, K. Tateoka, N. Yoshikawa, K. Kanazawa","doi":"10.1109/MCS.1996.506293","DOIUrl":"https://doi.org/10.1109/MCS.1996.506293","url":null,"abstract":"An extremely miniaturized GaAs PA has been developed for the application in 1.5-GHz Japanese digital cellular phones. By using MuMIC (i.e. multilayer microwave integrated circuit) technology, the half sized (0.2 cc) PA with 1.1 W output power has successfully been implemented. The 48-% power-added efficiency has been obtained with drain supply voltage of 3.5-V.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124225427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A SIMMWIC 76 GHz front-end with high polarization purity 具有高极化纯度的SIMMWIC 76ghz前端
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506341
M. Singer, A. Stiller, K. Strohm, J. Luy, E. Biebl
{"title":"A SIMMWIC 76 GHz front-end with high polarization purity","authors":"M. Singer, A. Stiller, K. Strohm, J. Luy, E. Biebl","doi":"10.1109/MCS.1996.506341","DOIUrl":"https://doi.org/10.1109/MCS.1996.506341","url":null,"abstract":"An integrated active antenna with a polarization purity better than 28 dB and a radiated power of 8 dBm at 75.7 GHz is presented. The linearly polarized radiator consists of a planar resonant antenna and a transit-time diode monolithically integrated on a silicon substrate. This active antenna finds various applications in low-cost multi-channel sensor systems, e.g. for object classification. Guidelines for the design are discussed. The characterization of the fabricated SIMMWIC devices includes measurements of output power, polarization purity, and far-field pattern. Moreover, the oscillation frequency of the devices has been successfully stabilized using subharmonic injection locking. The FM noise behavior of the locked oscillator has been characterized. The measured results are presented and compared to theoretical calculations.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124615365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
A 1.0 V GaAs receiver front-end IC for mobile communication equipment 一种用于移动通信设备的1.0 V GaAs接收器前端IC
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506307
J. Itoh, T. Nakatsuka, M. Nishitsuji, T. Uda, O. Ishikawa
{"title":"A 1.0 V GaAs receiver front-end IC for mobile communication equipment","authors":"J. Itoh, T. Nakatsuka, M. Nishitsuji, T. Uda, O. Ishikawa","doi":"10.1109/MCS.1996.506307","DOIUrl":"https://doi.org/10.1109/MCS.1996.506307","url":null,"abstract":"A 1.0 V operation GaAs receiver front-end IC has been developed by using novel combination of an E-FET and a D-FET for the amplifiers and mixer, high performance GaAs BP-MESFET and on-chip high-/spl epsiv//sub r/, capacitors. The IC shows conversion gain (CG) of 23 dB noise figure (NF) of 2.8 dB, the 3rd order output intercept point (IP3out) of 3 dBm, image rejection ratio (IRR) over 20 dB and LO to RF isolation over 25 dB, operating at 880 MHz and 6.8 mA. At 1.9 GHz, the IC also has excellent RF characteristics at dissipation current of 6.5 mA. The IC chip has the small size of 0.75 mm/spl times/0.75 mm, and is molded in a mini-6pin package.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123247900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Highly efficient compact Q-band MMIC power amplifier using 2-mil substrate and partially-matched output 高效紧凑型q波段MMIC功率放大器，采用2mil衬底和部分匹配输出
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506329
J. Lester, Y. Hwang, J. Chi, R. Lai, M. Biedenbender, P. Chow
{"title":"Highly efficient compact Q-band MMIC power amplifier using 2-mil substrate and partially-matched output","authors":"J. Lester, Y. Hwang, J. Chi, R. Lai, M. Biedenbender, P. Chow","doi":"10.1109/MCS.1996.506329","DOIUrl":"https://doi.org/10.1109/MCS.1996.506329","url":null,"abstract":"Presented is an 850 mW Q-band PHEMT MMIC power amplifier with a peak efficiency of 34% at 45.5 GHz, believed to be the highest reported at this power level and frequency. The compact amplifier (3.6 mm by 1.6 mm) features the use of a thinned 2-mil GaAs substrate and off-chip output matching and combining on a 5-mil alumina substrate.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121395922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
A high-performance and miniaturized dual-use (antenna/local) GaAs SPDT switch IC operating at +3 V/0 V 一个高性能和小型化的两用(天线/本地)GaAs SPDT开关IC工作在+ 3v / 0v
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI: 10.1109/MCS.1996.506326
H. Uda, K. Nogawa, T. Hirai, T. Sawai, T. Higashino, Y. Harada
{"title":"A high-performance and miniaturized dual-use (antenna/local) GaAs SPDT switch IC operating at +3 V/0 V","authors":"H. Uda, K. Nogawa, T. Hirai, T. Sawai, T. Higashino, Y. Harada","doi":"10.1109/MCS.1996.506326","DOIUrl":"https://doi.org/10.1109/MCS.1996.506326","url":null,"abstract":"We have developed an ultra-compact dual-use (antenna/local) switch IC for PHS operating at +3/0 V. This IC has a circuit configuration which utilizes MESFETs with two kinds of pinch-off voltages. Additional applied techniques include a circuit design method that employed electromagnetic field analysis, a pull-up method which utilizes forward current flowing in order through the gates of MESFETs, and high isolation characteristic obtained by use of a chip inductor. The insertion loss and isolation characteristics of this IC are, respectively, 0.54 dB and 28.4 dB at 1.9 GHz and 0.48 dB and 30.0 dB at 1.65 GHz. Furthermore, we were able to suppress adjacent channel leakage power to 61.5 dBc at 600 kHz offset during input power of 22 dBm QPSK modulated signals.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125631275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A technique for improving the distortion of GaAs variable attenuator IC using squeezed-gate FET structure 一种利用挤压栅场效应管结构改善砷化镓可变衰减集成电路畸变的技术
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-03-11 DOI: 10.1109/MCS.1996.506300
K. Miyatsuji, H. Ishida, T. Fukui, D. Ueda
{"title":"A technique for improving the distortion of GaAs variable attenuator IC using squeezed-gate FET structure","authors":"K. Miyatsuji, H. Ishida, T. Fukui, D. Ueda","doi":"10.1109/MCS.1996.506300","DOIUrl":"https://doi.org/10.1109/MCS.1996.506300","url":null,"abstract":"This paper describes a novel technique for improving the distortion of the GaAs attenuator IC using squeezed-gate structure of MESFETs. We found that the distortion originated from the steep cutoff Id-Vgs curve of conventional FETs. To obtain smooth cutoff characteristics, we devised the squeezed-gate structure where the FETs with different threshold voltages are connected in parallel making use of the short channel effect. Fabricated IC shows 10 dB reduction of the 3rd order intermodulation distortion by optimizing the ratio of the gate widths.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128021282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A low noise heterodyne 89 GHz MMIC module for the multifrequency imaging microwave radiometer (MIMR) 多频成像微波辐射计(MIMR)用低噪声外差89 GHz MMIC模块
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1996.506323
U. Guttich, J. Dieudonné, A. Klaassen, H. Sledzik, K. Schmegner, U. Goebel, M. Boheim
{"title":"A low noise heterodyne 89 GHz MMIC module for the multifrequency imaging microwave radiometer (MIMR)","authors":"U. Guttich, J. Dieudonné, A. Klaassen, H. Sledzik, K. Schmegner, U. Goebel, M. Boheim","doi":"10.1109/MCS.1996.506323","DOIUrl":"https://doi.org/10.1109/MCS.1996.506323","url":null,"abstract":"The authors describe the topology of the heterodyne 89 GHz channel of the Multifrequency Imaging Microwave Radiometer (MIMR). Several components such as double sideband 89 GHz mixer, 44.5 GHz local oscillator, frequency doubler, and IF low noise amplifier are realized using monolithic millimeter- and microwave technology. Detector and band-defining low-pass filter are lumped element assemblies. The front-end concept yields a compact low power consuming module with a proposed overall noise figure of about 5.5 dB. A gain of 52 dB is expected between the 89.1 GHz/spl plusmn/2.7 GHz RF input and the 0.1 GHz-2.7 GHz IF output.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122751747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Ka-band GaInP/GaAs HBT four-stage LNA 一种ka波段GaInP/GaAs HBT四级LNA
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1996.506322
A. Freundorfer, Y. Jamani, C. Falt
{"title":"A Ka-band GaInP/GaAs HBT four-stage LNA","authors":"A. Freundorfer, Y. Jamani, C. Falt","doi":"10.1109/MCS.1996.506322","DOIUrl":"https://doi.org/10.1109/MCS.1996.506322","url":null,"abstract":"A Ka-band GaInP/GaAs HBT four-stage MMIC LNA has been designed and fabricated. This circuit is to be used in a multifunction T/R module for local multipoint distribution systems (LMDS) which include both analog and digital transmission. An average noise figure of 6 dB from 27 GHz to 30 GHz, and a gain of greater than 15 dB were measured. These results are the best reported at Ka-band for a LNA using transistors from digital HBT library.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123734114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
60 GHz-band ultra-miniature monolithic T/R modules for multimedia wireless communication systems 用于多媒体无线通信系统的60 ghz波段超小型单片收发模块
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1996.506315
K. Ohata, T. Inoue, M. Funabashi, A. Inoue, Y. Takimoto, T. Kuwabara, S. Shinozaki, K. Maruhashi, K. Hosoya, H. Nagai
{"title":"60 GHz-band ultra-miniature monolithic T/R modules for multimedia wireless communication systems","authors":"K. Ohata, T. Inoue, M. Funabashi, A. Inoue, Y. Takimoto, T. Kuwabara, S. Shinozaki, K. Maruhashi, K. Hosoya, H. Nagai","doi":"10.1109/MCS.1996.506315","DOIUrl":"https://doi.org/10.1109/MCS.1996.506315","url":null,"abstract":"60 GHz-band ultra-miniature FM/FSK transmitter/receiver modules utilizing a complete MMIC chip set including dielectrically stabilized VCO and local oscillator for wireless LANs and video signal transmission systems are reported. The 0.9 cc transmitter module exhibits 11.5 MHz/V modulation sensitivity and 10.2 dBm output power with -2.8 ppm//spl deg/C frequency stability. The receiver module has 9.2 dB downconversion gain and 5.4 dB DSB noise figure.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115116484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Active coplanar up-converter for high gain V-band applications 用于高增益v波段应用的有源共面上变频器
IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1996.506336
R. Kulke, T. Sporkmann, I. Wolff, M. J. Rosário, F. Fortes
{"title":"Active coplanar up-converter for high gain V-band applications","authors":"R. Kulke, T. Sporkmann, I. Wolff, M. J. Rosário, F. Fortes","doi":"10.1109/MCS.1996.506336","DOIUrl":"https://doi.org/10.1109/MCS.1996.506336","url":null,"abstract":"This paper reports on the design of a coplanar up-converter from C- to V-band on GaAs. An optimum conversion gain (62-64 GHz: G/sub c/>4 dB) has been achieved from a non-linear optimisation, utilising a modified Tajima model for the PM-HFETs and an accurate library for the coplanar elements integrated into the CAD tool Libra. Due to the use of coplanar lumped elements, a very compact circuit size of 2.1 mm/sup 2/ has been obtained. The evaluation of the circuit demonstrates the excellent agreement of the linear and non-linear measured and simulated mixer behaviour up to 64 GHz.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121498101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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