高效紧凑型q波段MMIC功率放大器，采用2mil衬底和部分匹配输出

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI:10.1109/MCS.1996.506329

J. Lester, Y. Hwang, J. Chi, R. Lai, M. Biedenbender, P. Chow

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引用次数: 12

摘要

介绍了一款850mw q波段PHEMT MMIC功率放大器，其在45.5 GHz时的峰值效率为34%，被认为是该功率水平和频率下的最高报告。紧凑型放大器(3.6 mm × 1.6 mm)的特点是使用薄的2 mil GaAs衬底和片外输出匹配和组合在5 mil氧化铝衬底上。

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Highly efficient compact Q-band MMIC power amplifier using 2-mil substrate and partially-matched output

Presented is an 850 mW Q-band PHEMT MMIC power amplifier with a peak efficiency of 34% at 45.5 GHz, believed to be the highest reported at this power level and frequency. The compact amplifier (3.6 mm by 1.6 mm) features the use of a thinned 2-mil GaAs substrate and off-chip output matching and combining on a 5-mil alumina substrate.

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IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

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