一个高性能和小型化的两用(天线/本地)GaAs SPDT开关IC工作在+ 3v / 0v

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI:10.1109/MCS.1996.506326

H. Uda, K. Nogawa, T. Hirai, T. Sawai, T. Higashino, Y. Harada

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引用次数: 1

摘要

我们开发了一种超紧凑的两用(天线/本地)开关IC，用于小灵通工作在+3/0 V。该集成电路采用具有两种引脚电压的mesfet电路配置。其他应用技术包括采用电磁场分析的电路设计方法，利用正向电流有序流过mesfet栅极的上拉方法，以及使用芯片电感器获得的高隔离特性。该集成电路的插入损耗和隔离特性在1.9 GHz时分别为0.54 dB和28.4 dB，在1.65 GHz时分别为0.48 dB和30.0 dB。此外，在22dbm QPSK调制信号的输入功率下，我们能够在600 kHz偏置下将相邻通道泄漏功率抑制到61.5 dBc。

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A high-performance and miniaturized dual-use (antenna/local) GaAs SPDT switch IC operating at +3 V/0 V

We have developed an ultra-compact dual-use (antenna/local) switch IC for PHS operating at +3/0 V. This IC has a circuit configuration which utilizes MESFETs with two kinds of pinch-off voltages. Additional applied techniques include a circuit design method that employed electromagnetic field analysis, a pull-up method which utilizes forward current flowing in order through the gates of MESFETs, and high isolation characteristic obtained by use of a chip inductor. The insertion loss and isolation characteristics of this IC are, respectively, 0.54 dB and 28.4 dB at 1.9 GHz and 0.48 dB and 30.0 dB at 1.65 GHz. Furthermore, we were able to suppress adjacent channel leakage power to 61.5 dBc at 600 kHz offset during input power of 22 dBm QPSK modulated signals.

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来源期刊

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

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