一种用于移动通信设备的1.0 V GaAs接收器前端IC

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI:10.1109/MCS.1996.506307

J. Itoh, T. Nakatsuka, M. Nishitsuji, T. Uda, O. Ishikawa

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引用次数: 6

摘要

采用E-FET和D-FET作为放大器和混频器的新型组合，高性能GaAs BP-MESFET和片上高/spl epsiv/ sub /电容，开发了一种1.0 V工作GaAs接收器前端IC。该IC的转换增益(CG)为23 dB，噪声系数(NF)为2.8 dB，三阶输出截距点(IP3out)为3 dBm，图像抑制比(IRR)超过20 dB, LO - RF隔离超过25 dB，工作频率为880 MHz和6.8 mA。在1.9 GHz时，该IC在6.5 mA的耗散电流下也具有优异的射频特性。集成电路芯片的尺寸较小，为0.75 mm/spl倍/0.75 mm，采用mini-6pin封装成型。

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A 1.0 V GaAs receiver front-end IC for mobile communication equipment

A 1.0 V operation GaAs receiver front-end IC has been developed by using novel combination of an E-FET and a D-FET for the amplifiers and mixer, high performance GaAs BP-MESFET and on-chip high-/spl epsiv//sub r/, capacitors. The IC shows conversion gain (CG) of 23 dB noise figure (NF) of 2.8 dB, the 3rd order output intercept point (IP3out) of 3 dBm, image rejection ratio (IRR) over 20 dB and LO to RF isolation over 25 dB, operating at 880 MHz and 6.8 mA. At 1.9 GHz, the IC also has excellent RF characteristics at dissipation current of 6.5 mA. The IC chip has the small size of 0.75 mm/spl times/0.75 mm, and is molded in a mini-6pin package.

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来源期刊

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

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