微波接收机用InP HEMT技术的现状

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI:10.1109/MCS.1996.506319

P.M. Smith

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引用次数: 9

摘要

介绍了基于inp的高电子迁移率晶体管(HEMT)技术在100 GHz以上频率下的低噪声放大的现状。在回顾了整个行业在器件和电路性能方面的最新进展之后，讨论了两个问题，这两个问题将加快这项新技术进入微波系统的速度——材料/工艺成熟度和长期可靠性。

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Status of InP HEMT technology for microwave receiver applications

The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at which this new technology can be inserted into microwave systems-material/process maturity and long-term reliability-are discussed.

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来源期刊

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

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