共面波导技术中的砷化镓单片集成微波功率传感器

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI:10.1109/MCS.1996.506331

A. Dehé, H. Klingbeil, V. Krozer, K. Fricke, K. Beilenhoff, H. Hartnagel

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引用次数: 22

摘要

本文介绍了一种新型兼容MMIC的宽带功率传感器的制作工艺、理论和实验结果。该传感器采用50 /spl ω /共面波导设计，集成了AlGaAs热电传感器和GaAs体微机械膜，提高了灵敏度，能够在没有任何波导耦合结构的情况下以1.1 V/W的灵敏度检测射频功率。

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GaAs monolithic integrated microwave power sensor in coplanar waveguide technology

We present the fabrication technology, theoretical and experimental results of a novel MMIC compatible broadband power sensor. With a 50 /spl Omega/ coplanar waveguide design, integrated AlGaAs thermoelectric sensor and GaAs bulk micromachined membrane for increased sensitivity, this sensor is capable of detecting RF power with a sensitivity of 1.1 V/W without any waveguide coupling structure.

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IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

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