离子注入的13瓦c波段MMIC具有60%的峰值功率，增加了效率

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI:10.1109/MCS.1996.506296

W. Pribble, E. Griffin

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引用次数: 4

摘要

开发了一种在c波段工作时，以60%的峰值功率附加效率产生超过13瓦射频功率的GaAs MMIC功率放大器。在23%的分数带宽上测量了超过12瓦的输出功率，优于52%的PAE。采用非线性建模技术设计了标称电路，并通过制作和分析18元田口正交电路阵列进行了经验优化。采用ITT-GTC的多功能自对准门工艺制备了阵列电路。

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An ion-implanted 13 watt C-band MMIC with 60% peak power added efficiency

A GaAs MMIC power amplifier that produces in excess of 13 watts of RF power at 60% peak power added efficiency operating in C-band has been developed. Output power over 12 watts at better than 52% PAE has been measured over a 23% fractional bandwidth. The nominal circuit has been designed using non-linear modelling techniques and optimized empirically through fabrication and analysis of an 18-element Taguchi orthogonal array of circuits. The array circuits have been fabricated using ITT-GTC's Multi-Function Self Aligned Gate process.

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来源期刊

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

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