Advances in GaAs HBT power amplifiers for cellular phones and military applications

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI:10.1109/MCS.1996.506304

F. Ali, A. Gupta, A. Higgins

引用次数: 16

Abstract

This paper provides a synopsis of the research and development efforts in the USA in power amplifiers designed with GaAs Heterojunction Bipolar Transistor (HBT) technology. Design issues, performance and reliability of power amplifiers using AlGaAs/GaAs HBTs for RF, microwave and millimeter-wave applications are discussed. Key device parameters influencing different frequency applications are highlighted.

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用于移动电话和军事应用的GaAs HBT功率放大器的进展

本文概述了美国在利用砷化镓异质结双极晶体管(HBT)技术设计功率放大器方面的研究和开发工作。讨论了用于射频、微波和毫米波应用的AlGaAs/GaAs HBTs功率放大器的设计问题、性能和可靠性。重点介绍了影响不同频率应用的关键器件参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

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