用于开关带合成器结构的可淬灭GaAs HBT x波段压控振荡器

K. Kobayashi, D.M. Smith, C. Kau, A. Oki, A.K. Sharma, B. Allen, D. Streit
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引用次数: 3

摘要

作者在x波段实现了HBT压控振荡器的最低相位噪声。该VCO采用片外四分之一波开短段微带谐振器,制作在50毫微米石英衬底上,并采用并联变容二极管进行频率调谐。在8.9 GHz的中心频率下,VCO在100 kHz时达到-103至-105 dBc/Hz,调谐带宽为140 MHz(1.6%)。通过降低微带谐振器的空载Q,可以实现770 MHz的调谐带宽(8.6%),相位噪声范围为-98.5 ~ 100.5 dBc/Hz。在没有调谐变容管的情况下,在8.3 GHz的中心频率下实现了创纪录的最小相位噪声-112 dBc/Hz,这是HBT振荡器在x波段达到的最低相位噪声基准。HBT VCO MMIC具有单片集成PIN二极管猝灭电路,使VCO可用于开关带合成器应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A quenchable GaAs HBT X-band VCO for switched band synthesizer architectures
The authors have achieved the lowest phase noise reported for an HBT VCO at X-band. The VCO employs an off-chip quarter-wave open stub microstrip resonator fabricated on a 50 mil quartz substrate and a shunt-varactor diode for frequency tuning. At a center frequency of 8.9 GHz, the VCO achieves -103 to -105 dBc/Hz at 100 kHz over a tuning bandwidth of 140 MHz (1.6%). By reducing the unloaded Q of the microstrip resonator, a 770 MHz tuning bandwidth (8.6%) can be achieve with a phase noise ranging from -98.5 to 100.5 dBc/Hz. Without a tuning varactor, a record minimum phase noise of -112 dBc/Hz was achieved at a center frequency of 8.3 GHz which benchmarks the lowest reported phase noise achieved for an HBT oscillator at X-band. The HBT VCO MMIC features a monolithically integrated PIN diode quench circuit which enables the VCO to be used in switchband synthesizer applications.
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