An ion-implanted 13 watt C-band MMIC with 60% peak power added efficiency

Abstract

A GaAs MMIC power amplifier that produces in excess of 13 watts of RF power at 60% peak power added efficiency operating in C-band has been developed. Output power over 12 watts at better than 52% PAE has been measured over a 23% fractional bandwidth. The nominal circuit has been designed using non-linear modelling techniques and optimized empirically through fabrication and analysis of an 18-element Taguchi orthogonal array of circuits. The array circuits have been fabricated using ITT-GTC's Multi-Function Self Aligned Gate process.