用于移动电话和军事应用的GaAs HBT功率放大器的进展

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI:10.1109/MCS.1996.506304

F. Ali, A. Gupta, A. Higgins

{"title":"用于移动电话和军事应用的GaAs HBT功率放大器的进展","authors":"F. Ali, A. Gupta, A. Higgins","doi":"10.1109/MCS.1996.506304","DOIUrl":null,"url":null,"abstract":"This paper provides a synopsis of the research and development efforts in the USA in power amplifiers designed with GaAs Heterojunction Bipolar Transistor (HBT) technology. Design issues, performance and reliability of power amplifiers using AlGaAs/GaAs HBTs for RF, microwave and millimeter-wave applications are discussed. Key device parameters influencing different frequency applications are highlighted.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"201 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Advances in GaAs HBT power amplifiers for cellular phones and military applications\",\"authors\":\"F. Ali, A. Gupta, A. Higgins\",\"doi\":\"10.1109/MCS.1996.506304\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper provides a synopsis of the research and development efforts in the USA in power amplifiers designed with GaAs Heterojunction Bipolar Transistor (HBT) technology. Design issues, performance and reliability of power amplifiers using AlGaAs/GaAs HBTs for RF, microwave and millimeter-wave applications are discussed. Key device parameters influencing different frequency applications are highlighted.\",\"PeriodicalId\":227834,\"journal\":{\"name\":\"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers\",\"volume\":\"201 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1996.506304\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1996.506304","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 16

摘要

本文概述了美国在利用砷化镓异质结双极晶体管(HBT)技术设计功率放大器方面的研究和开发工作。讨论了用于射频、微波和毫米波应用的AlGaAs/GaAs HBTs功率放大器的设计问题、性能和可靠性。重点介绍了影响不同频率应用的关键器件参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Advances in GaAs HBT power amplifiers for cellular phones and military applications

This paper provides a synopsis of the research and development efforts in the USA in power amplifiers designed with GaAs Heterojunction Bipolar Transistor (HBT) technology. Design issues, performance and reliability of power amplifiers using AlGaAs/GaAs HBTs for RF, microwave and millimeter-wave applications are discussed. Key device parameters influencing different frequency applications are highlighted.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

自引率

0.00%

发文量