砷化镓MMIC旁通电容对IM3畸变的影响

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI:10.1109/MCS.1996.506317

H. Kawasaki, T. Ohgihara, Y. Murakami

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引用次数: 10

摘要

研究了与GaAs MMIC旁路电容有关的IM3失真。通过对一个1级MMIC放大器的非线性仿真和测量表明，旁路电容只对IM3性能有影响。提出了一种新的双音射频载波输出中频调幅解析模型。基于该模型，当输出匹配电路在中频处具有高阻抗时，射频载波输出由于中频对两音载波的调幅而产生失真。

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An investigation of IM3 distortion in relation to bypass capacitor of GaAs MMIC's

IM3 distortion in relation to a bypass capacitor of a GaAs MMIC has been investigated. Through non-linear simulation and the measurement of a 1-stage MMIC amplifier, it was shown that only IM3 performance depended on the bypass capacitor. A new analytical model of IF amplitude modulation for the 2-tone RF carrier outputs is proposed. Based upon this model, the RF carrier outputs were distorted from the amplitude modulation by IF of the 2-tone carriers when the output matching circuit was of high impedance at the IF.

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IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

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