超低噪声q波段单片放大器，采用基于InP和gaas的0.1 /spl mu/m HEMT技术

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI:10.1109/MCS.1996.506310

M. Aust, T. Huang, M. Dufault, H. Wang, D. Lo, R. Lai, M. Biedenbender, C.C. Yang

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引用次数: 18

摘要

本文报道了采用基于InP和gaas的0.1 /spl mu/m HEMT技术设计和开发超低噪声MMIC q波段LNAs的最新噪声数据。对于inala - ingaas - inp HEMT LNA，我们已经实现了低至1.6 dB的噪声系数性能和10 dB的一级LNA相关增益。采用两级设计，可获得20 dB增益和1.8 dB噪声系数。采用0.1 /spl mu/m AlGaAs-InGaAs-GaAs - HEMT工艺设计和制造了单级和多级MMIC LNAs。四级LNA还显示出2.5 dB噪声值和28 dB增益，这是迄今为止报道的基于gaas的hemt的最佳MMIC LNA结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ultra low noise Q-band monolithic amplifiers using InP- and GaAs-based 0.1 /spl mu/m HEMT technologies

Design and development of ultra low noise MMIC Q-band LNAs using both InP- and GaAs-based 0.1 /spl mu/m HEMT technologies with state-of-the-art noise figures are reported in this paper. For InAlAs-InGaAs-InP HEMT LNAs, we have achieved noise figure performance as low as 1.6 dB with 10 dB associated gain for a one-stage LNA. With a two stage design, 20 dB gain with 1.8 dB noise figure was obtained. Single- and multistage MMIC LNAs were also designed and fabricated using a production 0.1 /spl mu/m AlGaAs-InGaAs-GaAs HEMT process. A four-stage LNA also demonstrated 2.5 dB noise figure with 28 dB gain, which is the best MMIC LNA result ever reported for on GaAs-based HEMTs.

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来源期刊

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

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