全匹配，高效率q波段1瓦MMIC固态功率放大器

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI:10.1109/MCS.1996.506328

Y. Hwang, P. Chow, J. Lester, J. Chi, D. Garske, M. Biedenbender, R. Lai

{"title":"全匹配，高效率q波段1瓦MMIC固态功率放大器","authors":"Y. Hwang, P. Chow, J. Lester, J. Chi, D. Garske, M. Biedenbender, R. Lai","doi":"10.1109/MCS.1996.506328","DOIUrl":null,"url":null,"abstract":"A fully-matched, high-efficiency Q-band 1 watt MMIC power amplifier has been developed. This chip utilized 2 mil-thick GaAs substrate to improve amplifier gain, power added efficiency and heat dissipation. 1 watt output power and 30% efficiency was achieved at 44 GHz.","PeriodicalId":227834,"journal":{"name":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Fully-matched, high-efficiency Q-band 1 watt MMIC solid state power amplifier\",\"authors\":\"Y. Hwang, P. Chow, J. Lester, J. Chi, D. Garske, M. Biedenbender, R. Lai\",\"doi\":\"10.1109/MCS.1996.506328\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully-matched, high-efficiency Q-band 1 watt MMIC power amplifier has been developed. This chip utilized 2 mil-thick GaAs substrate to improve amplifier gain, power added efficiency and heat dissipation. 1 watt output power and 30% efficiency was achieved at 44 GHz.\",\"PeriodicalId\":227834,\"journal\":{\"name\":\"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1996.506328\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1996.506328","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

研制了一种全匹配、高效率q波段1瓦MMIC功率放大器。该芯片采用2ml厚的GaAs衬底，提高了放大器增益、功率附加效率和散热性能。在44 GHz时实现了1瓦的输出功率和30%的效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Fully-matched, high-efficiency Q-band 1 watt MMIC solid state power amplifier

A fully-matched, high-efficiency Q-band 1 watt MMIC power amplifier has been developed. This chip utilized 2 mil-thick GaAs substrate to improve amplifier gain, power added efficiency and heat dissipation. 1 watt output power and 30% efficiency was achieved at 44 GHz.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

自引率

0.00%

发文量