InAlAs/InGaAs/InP-HEMT technologies for high yield analog/digital ICs

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers Pub Date : 1996-06-17 DOI:10.1109/MCS.1996.506316

Y. Umeda, T. Enoki, K. Osafune, H. Ito, Y. Ishii

引用次数: 2

Abstract

High-yield and high-performance digital/analog ICs have been fabricated using the same InAlAs/InGaAs/InP-HEMT process. SCFL static frequency dividers show a fabrication yield of 63% and operate at 36.7/spl plusmn/0.55 GHz. Two-stage MMIC LNAs show a yield of 75% and at 62 GHz a noise figure of 4.3/spl plusmn/0.19 dB and a gain of 11.8/spl plusmn/0.25 dB.

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用于高产量模拟/数字ic的InAlAs/InGaAs/InP-HEMT技术

采用相同的InAlAs/InGaAs/InP-HEMT工艺制备了高产量和高性能数字/模拟ic。SCFL静态分频器的制造良率为63%，工作频率为36.7/spl plusmn/0.55 GHz。两级MMIC LNAs的产率为75%，在62 GHz时噪声系数为4.3/spl plusmn/0.19 dB，增益为11.8/spl plusmn/0.25 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

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